SUP40N10-35
New Product
Vishay Siliconix
N-Channel 105-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
105
FEATURES
r
DS(on)
(W)
I
D
(A)
37.5
36.0
0.035 @ V
GS
= 10 V
0.038 @ V
GS
= 6 V
D
TrenchFETr Power MOSFETS
D
175_C Junction Temperature
APPLICATIONS
D
Automotive
−
Motor Drives
−
12-V Systems
D
Note Book PC adaptors
TO-220AB
D
G
G D S
Top View
Ordering Information: SUP40N10-35—E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
105
"20
37.5
21.5
75
35
61
107
b
3.75
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
c
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case (Drain)
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Limit
40
62.5
1.4
Unit
_C/W
C/W
1
SUP40N10-35
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 105 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 105 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 105 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
= 6 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 15 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
10
75
0.026
0.028
0.035
0.038
0.063
0.077
S
W
105
2
4
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 1.25
W
I
D
^
40 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 50 V, V
GS
= 10 V, I
D
= 40 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2400
270
90
35
11
9
1.7
11
12
30
12
20
20
45
20
ns
W
60
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 30 A, di/dt = 100 A/ms
I
F
= 30 A, V
GS
= 0 V
1.0
60
5
0.15
37.5
75
1.5
100
8
0.4
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
SUP40N10-35
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
75
V
GS
= 10 thru 6 V
60
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
60
75
Vishay Siliconix
Transfer Characteristics
45
5V
45
30
30
T
C
= 125_C
15
25_C
−55_C
0
15
4V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
100
T
C
=
−55_C
r
DS(on)
−
On-Resistance (
W
)
80
g
fs
−
Transconductance (S)
25_C
125_C
0.06
0.08
On-Resistance vs. Drain Current
60
0.04
V
GS
= 6 V
40
20
0.02
V
GS
= 10 V
0
0
15
30
45
60
75
0.00
0
15
30
45
60
75
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
3000
Capacitance
20
V
DS
= 50 V
I
D
= 40 A
Gate Charge
2400
C
−
Capacitance (pF)
V
GS
−
Gate-to-Source Voltage (V)
C
iss
16
1800
12
1200
8
600
C
rss
4
C
oss
0
0
20
40
60
80
100
V
DS
−
Drain-to-Source Voltage (V)
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
0
0
10
20
30
40
50
60
70
Q
g
−
Total Gate Charge (nC)
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3
SUP40N10-35
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 15 A
I
S
−
Source Current (A)
2.5
100
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resiistance
(Normalized)
2.0
1.5
10
T
J
= 150_C
T
J
= 25_C
1.0
0.5
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain-Source Breakdown Voltage vs.
Junction Temperature
140
Drain-Source Breakdown Voltage (V)
135
130
125
120
115
110
105
−50
I
D
= 10 mA
100
I
Dav
(a)
10
I
AV
(A) @ T
A
= 25_C
1
I
AV
(A) @ T
A
= 150_C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(Sec)
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
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4
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
SUP40N10-35
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
50
Vishay Siliconix
1000
Safe Operating Area
Limited
by r
DS(on)
40
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
100
10
ms
100
ms
30
10
1 ms
10 ms
1
T
C
= 25_C
Single Pulse
dc, 100 ms
20
10
0
0
25
50
75
100
125
150
175
T
C
−
Ambient Temperature (_C)
0.1
0.1
1
10
100
1000
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 72797
S-40445—Rev. A, 15-Mar-04
www.vishay.com
5
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