SUM75N15-18P
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
150
R
DS(on)
(Ω)
0.018 at V
GS
= 10 V
I
D
(A)
75
d
Q
g
(Typ.)
64
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
• Power Supplies
TO-263
D
G
G
D S
S
Ordering Information:
SUM75N15-18P-E3 (Lead (Pb)-free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
150
± 20
75
d
70
180
50
125
312.5
b
3.12
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
°C/W
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
www.vishay.com
1
SUM75N15-18P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
c
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 150 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
DS
= 15 V, I
D
= 20 A
Min.
150
2.5
Typ.
Max.
Unit
4.5
± 250
1
50
250
V
nA
µA
A
120
0.0148
0.0296
55
4180
0.018
0.036
Ω
S
V
GS
= 0 V, V
DS
= 75 V, f = 1 MHz
235
83
64
100
pF
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V
DS
= 75 V, V
GS
= 10 V, I
D
= 85 A
f = 1 MHz
V
DD
= 75 V, R
L
= 0.88
Ω
I
D
≅
85 A, V
GEN
= 10 V, R
g
= 1
Ω
23
16
2.1
15
10
25
8
4.2
25
15
40
15
nC
Ω
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
75
180
I
F
= 30 A, V
GS
= 0 V
I
F
= 50 A, dI/dt = 100 A/µs
1.0
130
8
520
1.5
200
12
1200
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
SUM75N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
180
V
GS
= 10 thru 7
V
150
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
60
120
V
GS
= 6
V
90
40
30
T
C
= 25 °C
20
T
C
= 125 °C
T
C
= - 55 °C
60
30
V
GS
= 5
V
10
0
0
1
2
3
4
5
0
0
2
4
6
8
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
100
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
80
0.04
Transfer Characteristics
0.03
60
T
C
= 25 °C
40
T
C
= 125 °C
0.02
V
GS
= 10
V
0.01
20
0
0
8
16
24
32
40
0.00
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.10
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
5000
6000
On-Resistance vs. Drain Current
C
iss
4000
0.06
3000
0.04
T
A
= 150 °C
2000
C
oss
C
rss
0
10
20
30
40
0.02
T
A
= 25 °C
0.00
0
2
4
6
8
10
1000
0
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
www.vishay.com
3
SUM75N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
=
85
A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 75
V
6
V
DS
= 120
V
R
DS(on)
- On-Resistance
2.0
(Normalized)
V
GS
= 10
V
1.5
2.5
I
D
= 20 A
4
1.0
2
0
0
20
40
60
80
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
0.8
Drain-Source Breakdown
Voltage
(V)
190
On-Resistance vs. Junction Temperature
I
D
= 1 mA
180
0.2
V
GS(th)
Variance
(V)
170
- 0.4
I
D
= 1 mA
- 1.0
I
D
= 250
µA
- 1.6
- 50
160
150
- 25
0
25
50
75
100
125
150
140
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
T
J
- Temperature (°C)
Threshold Voltage
100
T
J
= 150 °C
10
I
S
- Source Current (A)
I
D
- Drain Current (A)
T
J
= 25 °C
1
Drain-Source Breakdown vs. Junction Temperature
1000
Limited
by
R
DS(on)*
10
µs
100
100
µs
10
1 ms
10 ms
100 ms, DC
0.1
1
0.01
0.1
T
C
= 25 °C
Single Pulse
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1.0
10
100
1000
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
4
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
SUM75N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
400
350
80
I
D
- Drain Current (A)
300
Package Limited
Power (W)
60
250
200
150
100
20
50
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
40
T
C
- Case Temperature (°C)
T
J
- Temperature (°C)
Current Derating*, Junction-to-Case
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
Power Derating*, Junction-to-Case
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (s)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?69995.
Document Number: 69995
S-82349-Rev. B, 22-Sep-08
www.vishay.com
5
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