SUM70N03-09CP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.0095 @ V
GS
= 20 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
70
58
D
D
D
D
TrenchFETr Power MOSFET
Optimized for High- or Low-Side
New Low Thermal Resistance Package
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
D
TO-263
DRAIN connected to TAB
G
G
D S
S
Top View
Ordering Information: SUM70N03-09CP
SUM70N03-09CP-E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
70
40
Unit
V
100
35
61
b
93
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
3.75
−55
to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71943
S-32523—Rev. D, 08-Dec-03
www.vishay.com
PCB Mount
c
Symbol
R
thJA
R
thJC
Limit
40
1.6
Unit
_C/W
1
SUM70N03-09CP
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0115
100
0.0076
0.0095
0.015
0.014
S
W
30
1.0
3.0
"100
1
250
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
0.5
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2200
410
180
1.5
31
7.5
5.0
9
80
22
8
15
120
35
12
ns
2.1
45
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
35
100
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120
V
GS
= 10 thru 6 V
5V
90
I D
−
Drain Current (A)
I D
−
Drain Current (A)
90
120
Transfer Characteristics
60
4V
60
T
C
= 125_C
30
25_C
0
−55_C
3
4
5
6
30
3V
0
0
2
4
6
2V
8
10
0
1
2
V
DS
−
Drain-to-Source Voltage (V)
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V
GS
−
Gate-to-Source Voltage (V)
Document Number: 71943
S-32523—Rev. D, 08-Dec-03
2
SUM70N03-09CP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
100
0.05
On-Resistance vs. Drain Current
g fs
−
Transconductance (S)
T
C
=
−55_C
25_C
125_C
60
r DS(on)
−
On-Resistance (
W
)
80
0.04
0.03
40
0.02
V
GS
= 4.5 V
V
GS
= 10 V
20
0.01
0
0
10
20
30
40
50
0.00
0
20
40
60
80
100
I
D
−
Drain Current (A)
3000
2500
C
−
Capacitance (pF)
2000
1500
1000
C
oss
500
0
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
C
rss
I
D
−
Drain Current (A)
10
V
DS
= 15 V
I
D
= 30 A
Capacitance
C
iss
V GS
−
Gate-to-Source Voltage (V)
Gate Charge
8
6
4
2
0
0
6
12
18
24
30
Q
g
−
Total Gate Charge (nC)
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 30 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r DS(on)
−
On-Resistance (
W
)
(Normalized)
1.6
1.2
T
J
= 150_C
10
T
J
= 25_C
0.8
0.4
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 71943
S-32523—Rev. D, 08-Dec-03
www.vishay.com
3
SUM70N03-09CP
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
90
75
100
I D
−
Drain Current (A)
60
45
30
15
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
I D
−
Drain Current (A)
1000
Safe Operating Area
Limited
by r
DS(on)
10, 100
ms
10
1 ms
10 ms
100 ms
1s
10 s
T
A
= 25_C
Single Pulse
100 s
dc
1
0.1
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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Document Number: 71943
S-32523—Rev. D, 08-Dec-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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