SUM110N08-07
New Product
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
75
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance Package
r
DS(on)
(W)
I
D
(A)
110
APPLICATIONS
D
Automotive
- Boardnet 42-V EPS and ABS
- Motor Drives
D
High Current
D
DC/DC Converters
0.007 @ V
GS
= 10 V
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM110N08-07
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
75
"20
110
63
350
75
280
200
b
3.7
-55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71829
S-21863—Rev. C, 21-Oct-02
www.vishay.com
PCB Mount
c
Symbol
R
thJA
R
thJC
Limit
40
0.75
Unit
_C/W
_
1
SUM110N08-07
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.0055
0.007
0.013
0.017
S
W
75
V
2.5
4.0
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 35 V, R
L
= 0.4
W
I
D
^
85 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 35 V, V
GS
= 10 V, I
D
= 110 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5250
700
310
90
24
27
20
100
45
75
30
150
70
115
ns
165
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 85 A, di/dt = 100 A/ms
m
I
F
= 110 A, V
GS
= 0 V
1.0
75
3.5
0.13
110
350
1.5
120
7
0.30
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71829
S-21863—Rev. C, 21-Oct-02
SUM110N08-07
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
160
200
Vishay Siliconix
Transfer Characteristics
150
120
100
5V
50
80
T
C
= 125_C
40
25_C
-55
_C
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
200
T
C
= -55_C
25_C
r
DS(on)
- On-Resistance (
W
)
160
g
fs
- Transconductance (S)
0.008
0.010
On-Resistance vs. Drain Current
V
GS
= 10 V
0.006
120
125_C
80
0.004
40
0.002
0
0
15
30
45
60
75
90
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
8000
7000
V
GS
- Gate-to-Source Voltage (V)
6000
5000
4000
3000
2000
1000
0
0
15
30
45
60
75
C
iss
16
20
Gate Charge
V
DS
= 35 V
I
D
= 85 A
C - Capacitance (pF)
12
8
C
rss
C
oss
4
0
0
30
60
90
120
150
180
V
DS
- Drain-to-Source Voltage (V)
Document Number: 71829
S-21863—Rev. C, 21-Oct-02
Q
g
- Total Gate Charge (nC)
www.vishay.com
3
SUM110N08-07
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.0
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
10
T
J
= 25_C
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
100
Drain Source Breakdown vs.
Junction Temperature
94
100
V
(BR)DSS
(V)
I
Dav
(a)
88
I
D
= 250
mA
10
I
AV
(A) @ T
A
= 25_C
82
1
76
I
AV
(A) @ T
A
= 150_C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
70
-50
-25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (_C)
www.vishay.com
4
Document Number: 71829
S-21863—Rev. C, 21-Oct-02
SUM110N08-07
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
120
1000
Vishay Siliconix
Safe Operating Area
100
100
I
D
- Drain Current (A)
80
I
D
- Drain Current (A)
Limited
by r
DS(on)
100, 10
ms
1 ms
60
10
10 ms
100 ms
dc
40
1
20
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71829
S-21863—Rev. C, 21-Oct-02
www.vishay.com
5
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