SUM110N06-04L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
FEATURES
r
DS(on)
(W)
I
D
(A)
110
a
0.0035 @ V
GS
= 10 V
0.005 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFETS
D
200_C Junction Temperature
D
New Low Thermal Resistance Package
APPLICATIONS
D
TO-263
D
Automotive
– Boardnet 42-V EPS and ABS
– Motor Drives
D
High Current
D
DC/DC Converters
G
G
D S
S
N-Channel MOSFET
Top View
SUM110N06-04L
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
60
"20
110
a
110
a
440
75
280
437.5
c
3.7
–55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mount
d
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
_C/W
_
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
www.vishay.com
1
SUM110N06-04L
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 48 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 48 V, V
GS
= 0 V, T
J
= 200_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 200_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
120
0.0028
0.004
0.0035
0.005
0.0058
0.0088
S
W
60
V
1
3
"100
1
50
10
nA
mA
m
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.4
W
I
D
^
110 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 110 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
7500
1050
700
150
25
45
20
135
80
150
30
200
120
220
ns
220
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 110 A, di/dt = 100 A/ms
I
F
= 110 A, V
GS
= 0 V
1.1
75
2.5
0.09
110
440
1.4
120
5
0.25
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
SUM110N06-04L
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 5 V
200
I
D
– Drain Current (A)
4V
150
I
D
– Drain Current (A)
200
250
Vishay Siliconix
Transfer Characteristics
150
100
100
T
C
= 125_C
50
25_C
50
3V
0
0
2
4
6
8
10
–55_C
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
350
T
C
= –55_C
300
g
fs
– Transconductance (S)
250
200
150
100
50
0
0
20
40
60
80
100
120
25_C
r
DS(on)
– On-Resistance (
W
)
0.005
0.006
On-Resistance vs. Drain Current
0.004
V
GS
= 4.5 V
V
GS
= 10 V
125_C
0.003
0.002
0.001
0.000
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
12000
20
Gate Charge
V
GS
– Gate-to-Source Voltage (V)
10000
C – Capacitance (pF)
C
iss
16
V
GS
= 30 V
I
D
= 85 A
8000
12
6000
8
4000
C
oss
2000
C
rss
0
12
24
36
48
60
4
0
0
0
50
100
150
200
250
300
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
Q
g
– Total Gate Charge (nC)
www.vishay.com
3
SUM110N06-04L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
2.0
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
10
T
J
= 25_C
1.0
0.5
0.0
–50 –25
0
25
50
75
100 125 150 175 200
1
0
0.3
0.6
0.9
1.2
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
80
Drain Source Breakdown vs.
Junction Temperature
100
I
Dav
(a)
I
AV
(A) @ T
A
= 25_C
V
(BR)DSS
(V)
75
I
D
= 10 mA
10
70
1
I
AV
(A) @ T
A
= 150_C
65
0.1
0.00001
0.0001
0.001
t
in
(Sec)
0.01
0.1
60
–50 –25
0
25
50
75
100 125 150 175 200
T
J
– Junction Temperature (_C)
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4
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
SUM110N06-04L
New Product
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
120
1000
Vishay Siliconix
Safe Operating Area
100
100
I
D
– Drain Current (A)
80
I
D
– Drain Current (A)
Limited
by r
DS(on)
10
10
ms
100
ms
60
1 ms
10 ms
100 ms
dc
40
1
20
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
200
0.1
0.1
1
10
100
T
C
– Ambient Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
www.vishay.com
5
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