SUD70N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.0043 @ V
GS
= 10 V
0.0065 @ V
GS
= 4.5 V
I
D
(A)
a
33
27
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
Optimized for Low-Side Synchronous
Rectifier Operation
D
100% R
g
Tested
APPLICATIONS
D
D
DC/DC Converters
D
Synchronous Rectifiers
TO-252
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD70N03-04P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
C
= 25_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
33
70
b
100
8.3
a
88
8.3
a
−55
to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package.
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
C/W
1
SUD70N03-04P
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
20
0.0051
50
0.0035
0.0043
0.007
0.0065
S
W
30
1.0
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50 A
f = 1 MHz
0.5
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5100
860
430
1.0
90
18
16
12
12
40
10
20
20
60
15
ns
1.5
135
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
40
100
1.5
80
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
a. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 5 V
160
I D
−
Drain Current (A)
I D
−
Drain Current (A)
200
Transfer Characteristics
150
4V
120
100
T
C
= 125_C
50
25_C
−55_C
0
80
40
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
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0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72237
S-40841—Rev. B, 03-May-04
2
SUD70N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
180
T
C
=
−55_C
G
FS
−
Transconductance (S)
25_C
120
125_C
90
60
30
0
0
20
40
60
80
100
R
DS(on)
−
On-Resistance (W)
150
0.008
0.010
On-Resistance vs. Drain Current
0.006
V
GS
= 4.5 V
0.004
V
GS
= 10 V
0.002
0.000
0
20
40
60
80
100
I
D
−
Drain Current (A)
8000
I
D
−
Drain Current (A)
10
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
C
−
Capacitance (pF)
6000
8
V
DS
= 15 V
I
D
= 50 A
6
C
iss
4000
4
2000
C
rss
0
0
6
12
18
24
30
V
DS
−
Drain-to-Source Voltage (V)
C
oss
2
0
0
20
40
60
80
100
Q
g
−
Total Gate Charge (nC)
1.8
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
100
Source-Drain Diode Forward Voltage
V
GS
= 10 V
I
D
= 20 A
I S
−
Source Current (A)
T
J
= 150_C
10
T
J
= 25_C
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
3
SUD70N03-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Ambient Temperature
40
1000
Limited
by r
DS(on)
Safe Operating Area
32
I D
−
Drain Current (A)
I D
−
Drain Current (A)
100
10
ms
100
ms
1 ms
10 ms
24
10
16
1
100 ms
1s
10 s
100 s
DC
8
0.1
Single Pulse
T
A
= 25_C
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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4
Document Number: 72237
S-40841—Rev. B, 03-May-04
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