SUD50N06-12
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
FEATURES
I
D
(A)
c
63
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
D
TrenchFETr Power MOSFET
D
175
_C
Junction Temperature
APPLICATIONS
D
Automotive and Industrial
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD50N06-12
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
"20
63
c
36
100
63
c
35
61
107
b
3a
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
16
40
1.1
Maximum
20
50
1.4
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A.
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
www.vishay.com
1
SUD50N06-12
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
b
I
DSS
I
D(on)
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
Forward Transconductance
b
r
DS(on)
g
fs
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
DS
= 15 V, I
D
= 20 A
25
50
0.0095
0.012
0.021
0.027
S
W
60
2.0
4.0
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.6
W
I
D
^
50 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
,
,
f = 1 MHz
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
2500
400
165
2.1
40
13
12
15
11
30
7
25
20
50
15
ns
60
nC
W
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.0
40
100
1.5
80
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
SUD50N06-12
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
V
GS
= 10 thru 6 V
80
I D - Drain Current (A)
I D - Drain Current (A)
80
100
Vishay Siliconix
Transfer Characteristics
60
5V
40
60
40
T
C
= 125_C
25_C
- 55_C
20
4V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
20
0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Transconductance
120
100
g fs - Transconductance (S)
80
125_C
60
40
20
0
0
10
20
30
40
50
60
T
C
= - 55_C
r DS(on)- On-Resistance (
W
)
25_C
0.012
0.016
On-Resistance vs. Drain Current
0.008
V
GS
= 10 V
0.004
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
3500
3000
C
iss
C - Capacitance (pF)
2500
2000
1500
1000
C
rss
500
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
C
oss
I
D
- Drain Current (A)
20
V
DS
= 30 V
I
D
= 50 A
Capacitance
Gate Charge
V GS - Gate-to-Source Voltage (V)
16
12
8
4
0
0
10
20
30
40
50
60
70
80
Q
g
- Total Gate Charge (nC)
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
www.vishay.com
3
SUD50N06-12
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.8
2.4
r DS(on)- On-Resistance (
W
)
(Normalized)
2.0
1.6
1.2
0.8
0.4
- 50
V
GS
= 10 V
I
D
= 20 A
I S - Source Current (A)
T
J
= 150_C
100
Source-Drain Diode Forward Voltage
10
T
J
= 25_C
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
80
Limited by
Package
I D - Drain Current (A)
1000
Safe Operating Area
60
I D - Drain Current (A)
100
Limited by r
DS(on)
10
ms
100
ms
40
10
1 ms
10 ms
1
T
C
= 25_C
Single Pulse
100 ms
1 s, dc
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
SUD50N06-12
New Product
THERMAL RATINGS
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 72385
S-31920—Rev. A, 15-Sep-03
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
