c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72860
S-42058—Rev. B, 15-Nov-04
www.vishay.com
1
SUD50N04-06H
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
r
DS(on)
g
fs
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
DS
= 15 V, I
D
= 15 A
20
50
50
0.0049
0.006
0.009
0.012
S
W
40
3.4
5.0
"100
1
50
150
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 0.4
W
I
D
]
50 A, V
GEN
= 10 V, R
g
= 2.5
W
f = 1.0 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 50 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
6700
600
320
95
37
21
1.7
20
95
50
12
30
145
75
20
ns
W
nC
pF
Source-Drain Ciode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
s
I
SM
V
SD
t
rr
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/ms
0.90
40
50
100
1.50
60
A
V
ns
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
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