SUD40N03-18P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.018 @ V
GS
= 10 V
0.027 @ V
GS
= 4.5 V
I
D
(A)
a
"40
"34
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD40N03-18P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"40
"28
"100
40
62.5
c
7.5
b
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
Junction-to-Lead
Notes
a. Package Limited.
b. Surface Mounted on 1” x1” FR4 Board, t
v
10 sec.
c. See SOA curve for voltage derating.
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
R
thJL
Typical
17
50
2
4
Maximum
20
60
2.4
4.8
Unit
_C/W
_C/W
2-1
SUD40N03-18P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
D i S
O S
R i
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
10
0.021
40
0.014
0.018
0.029
0.027
S
W
30
V
1.0
"100
1
50
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0 37
W
V,
0.37
I
D
^
40 A, V
GEN
= 10 V R
G
= 2 5
W
A
V,
2.5
V,
V
DS
= 15 V, V
GS
= 10 V I
D
= 40 A
V
V
GS
= 0 V, V
DS
= 25 V F = 1 MH
V
V,
MHz
1300
340
95
19
5
3
8
8.5
17
6
12
13
ns
25
9
30
nC
C
pF
F
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Continuous Current
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
S
I
SM
V
SD
t
rr
I
F
= 100 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
30
40
A
80
1.5
50
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
SUD40N03-18P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
V
GS
= 10 thru 8 V
120
I D – Drain Current (A)
I D – Drain Current (A)
6V
6V
120
25_C
125_C
80
160
T
C
= –55_C
Vishay Siliconix
Transfer Characteristics
80
5V
40
4V
40
2, 3 V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
60
T
C
= –55_C
50
g fs – Transconductance (S)
25_C
125_C
r DS(on)– On-Resistance (
W
)
0.05
0.06
On-Resistance vs. Drain Current
40
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
0.02
30
20
10
0.01
0
0
20
40
60
80
100
120
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
1800
20
Gate Charge
V GS – Gate-to-Source Voltage (V)
1500
C
iss
C – Capacitance (pF)
1200
16
V
DS
= 15 V
I
D
= 40 A
12
900
8
600
C
oss
C
rss
300
4
0
0
5
10
15
20
25
30
0
0
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
SUD40N03-18P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 40 A
r DS(on)– On-Resistance (
W
)
(Normalized)
1.6
I S – Source Current (A)
T
J
= 175_C
100
Source-Drain Diode Forward Voltage
1.2
T
J
= 25_C
10
0.8
0.4
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
50
500
10, 100
ms
Limited
by r
DS(on)
Safe Operating Area
40
I D – Drain Current (A)
I D – Drain Current (A)
100
30
10
1 ms
10 ms
100 ms
1s
dc
20
1
T
C
= 25_C
Single Pulse
10
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
1
10
30
2-4
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