b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 6 V
40
I
D
- Drain Current (A)
5V
10
8
I
D
- Drain Current (A)
30
6
20
4V
4
T
C
= 25 °C
2
T
C
= 125 °C
10
3V
0
0
2
4
6
8
10
T
C
= - 55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
32
T
C
= - 55 °C
24
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
25 °C
125 °C
0.08
0.10
Transfer Characteristics
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
16
8
0
0
5
10
15
20
25
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1000
On-Resistance vs. Drain Current
10
I
D
= 23 A
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 30
V
V
DS
= 15
V
6
V
DS
= 45
V
4
800
C - Capacitance (pF)
C
iss
600
8
400
200
C
rss
0
0
10
20
C
oss
2
0
30
40
50
60
0
2
4
6
8
10
12
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
Gate Charge
www.vishay.com
3
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.1
I
D
= 15 A
1.8
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
V
GS
= 10
V
10
T
J
= 150 °C
T
J
= 25 °C
1
100
(Normalized)
1.5
V
GS
= 4.5
V
1.2
0.1
T
J
= - 50 °C
0.9
0.01
0.6
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.08
0.5
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.2
0.06
T
J
= 125 °C
0.04
V
GS(th)
Variance
(V)
- 0.1
I
D
= 1 mA
I
D
= 250
µA
- 0.7
- 0.4
0.02
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
500
100
Threshold Voltage
Limited
by
R
DS(on)
*
400
I
D
- Drain Current (A)
10
10
µs
100
µs
Power (W)
300
1 ms
1
10 ms
100 ms, DC
200
0.1
100
T
C
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
0
0.001
0.01
0.1
Time (s)
1
10
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
40
3.0
2.5
30
2.0
Power (W)
Power (W)
20
1.5
1.0
10
0.5
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
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