SUD15P01-52
New Product
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.052 @ V
GS
= –4.5 V
–8
0.070 @ V
GS
= –2.5 V
0.105 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–15
–13
–10.5
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
Low Gate Threshold
APPLICATIONS
D
Pass Transistor for LDOs
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD15P01-52
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
–8
"8
–15
–8.7
–25
–10
5
21.4
b, c
1.5
c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Junction-to-Ambient
b
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Steady State
R
thJA
R
thJC
Symbol
Typical
40
80
5.6
Maximum
50
100
7
Unit
_C/W
C/W
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
www.vishay.com
1
SUD15P01-52
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –6.4 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
V
DS
= –5 V, V
GS
= –4.5 V
I
D(on)
V
DS
= –5 V, V
GS
= –2.5 V
V
GS
= –4.5 V, I
D
= –10 A
V
GS
= –4.5 V, I
D
= –13 A, T
J
= 125_C
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –13 A, T
J
= 175_C
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –2 A
Forward Transconductance
a
g
fs
V
DS
= –5 V, I
D
= –10 A
16
–25
–10
0.043
0.052
0.065
0.075
0.070
0.105
S
W
A
–8
–0.45
–0.8
"100
–1
–50
–150
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –4 V, R
L
= 0.22
W
I
D
]
–15 A, V
GEN
= –4.5 V, R
G
= 2.5
W
V
DS
= –4 V, V
GS
= –4.5 V, I
D
= –10 A
V
GS
= 0 V, V
DS
= –4 V, f = 1 MHz
1300
430
245
10.5
1.6
2
10
16
30
25
20
25
45
40
ns
15
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
I
s
I
SM
V
SD
t
rr
I
F
= –15 A, V
GS
= 0 V
I
F
= –15 A, di/dt = 100 A/ms
45
–15
A
–25
–1.5
75
V
ns
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
SUD15P01-52
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
4.5 V
48
I D – Drain Current (A)
4V
I D – Drain Current (A)
3.5 V
36
3V
24
2.5 V
2V
12
1.5 V
1V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
16
20
T
C
= –55_C
25_C
Vishay Siliconix
Transfer Characteristics
125_C
12
8
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
25
T
C
= –55_C
25_C
15
125_C
r DS(on)– On-Resistance (
W
)
0.20
On-Resistance vs. Drain Current
20
g fs – Transconductance (S)
0.16
0.12
V
GS
= 1.8 V
0.08
V
GS
= 2.5 V
V
GS
= 4.5 V
0.04
10
5
0
0
5
10
15
20
25
0.00
0
5
10
15
20
25
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
2000
8
Gate Charge
1600
C – Capacitance (pF)
C
iss
1200
V GS – Gate-to-Source Voltage (V)
6
V
DS
= 4 V
I
D
= 10 A
4
800
C
oss
400
C
rss
0
0
2
4
6
8
2
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
www.vishay.com
3
SUD15P01-52
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.6
V
GS
= 4.5 V
I
D
= 10 A
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
I S – Source Current (A)
10
T
J
= 25_C
T
J
= 150_C
30
Source-Drain Diode Forward Voltage
1.2
1.0
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
175
0.0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
18
100.0
Safe Operating Area
15
I D – Drain Current (A)
I D – Drain Current (A)
100
ms
10.0
Limited
by r
DS(on)
12
1 ms
10 ms
100 ms
dc, 1 s
9
6
1.0
T
C
= 25_C
Single Pulse
3
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.1
0.1
1.0
V
DS
– Drain-to-Source Voltage (V)
10.0
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71806
S-20966—Rev. B, 01-Jul-02
1
10
100
4
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