a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71253
S−42350—Rev. B, 20-Dec-04
SUD06N10-225L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
V
GS
= 10 thru 5 V
15
T
C
=
−55_C
12
I D
−
Drain Current (A)
12
I D
−
Drain Current (A)
25_C
Transfer Characteristics
9
4V
9
125_C
6
6
3
3, 2 V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
3
0
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
15
T
C
=
−55_C
25_C
9
125_C
6
r DS(on)
−
On-Resistance (
W
)
12
g fs
−
Transconductance (S)
0.30
0.25
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.20
0.15
0.10
0.05
0.00
V
GS
= 10 V
3
0
0
3
6
9
12
15
0
3
6
9
12
15
I
D
−
Drain Current (A)
350
300
C
−
Capacitance (pF)
250
200
150
100
50
0
0
20
40
60
80
100
V
DS
−
Drain-to-Source Voltage (V)
C
oss
C
rss
C
iss
I
D
−
Drain Current (A)
10
V
DS
= 50 V
I
D
= 6.5 A
Capacitance
Gate Charge
V GS
−
Gate-to-Source Voltage (V)
8
6
4
2
0
0
1
2
3
4
5
Q
g
−
Total Gate Charge (nC)
Document Number: 71253
S−42350—Rev. B, 20-Dec-04
www.vishay.com
3
SUD06N10-225L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
Source-Drain Diode Forward Voltage
10
r
DS(on)
−
On-Resiistance
(Normalized)
2.0
I S
−
Source Current (A)
1.5
T
J
= 175_C
1.0
T
J
= 25_C
0.5
0.0
−50
−25
0
25
50
75 100 125
T
J
−
Junction Temperature (_C)
150
175
1
0
0.2
0.4
0.6
0.8
1.0
V
SD
−
Source-to-Drain Voltage (V)
1.2
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71253.
www.vishay.com
Document Number: 71253
S−42350—Rev. B, 20-Dec-04
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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