STK14C88-M,STK14C88-M pdf中文资料,STK14C88-M引脚图,STK14C88-M电路-Datasheet-电子工程世界

STK14C88-M: 产品描述32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32; 产品类别存储; 文件大小84KB，共12页; 制造商ETC1

下载文档详细参数选型对比全文预览

STK14C88-M概述

32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32

32K × 8 非易失性存储器, 45 ns, CDIP32

STK14C88-M规格参数

参数名称	属性值
功能数量	1
端子数量	32
最大工作温度	125 Cel
最小工作温度	-55 Cel
最大供电/工作电压	5.5 V
最小供电/工作电压	4.5 V
额定供电电压	5 V
最大存取时间	45 ns
加工封装描述	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32
状态	ACTIVE
工艺	CMOS
包装形状	RECTANGULAR
包装尺寸	IN-LINE
端子形式	THROUGH-HOLE
端子间距	2.54 mm
端子涂层	TIN LEAD
端子位置	DUAL
包装材料	CERAMIC, METAL-SEALED COFIRED
温度等级	MILITARY
内存宽度	8
组织	32K X 8
存储密度	262144 deg
操作模式	ASYNCHRONOUS
位数	32768 words
位数	32K
内存IC类型	NON-VOLATILE SRAM
串行并行	PARALLEL

STK14C88-M相似产品对比

	STK14C88-M	STK14C88-5K35M	STK14C88-5K45M	STK14C88-5L45M	STK14C88-5C35M	STK14C88-5L35M	STK14C88-5C45M
描述	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32	32K X 8 NON-VOLATILE SRAM, 45 ns, CQCC32	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32	32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32
功能数量	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32
最大工作温度	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel
最小工作温度	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel	-55 Cel
最大供电/工作电压	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电/工作电压	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
额定供电电压	5 V	5 V	5 V	5 V	5 V	5 V	5 V
最大存取时间	45 ns	45 ns	45 ns	45 ns	45 ns	45 ns	45 ns
加工封装描述	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32	0.450 INCH, CERAMIC, LCC-32	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32	0.300 INCH, SIDE BRAZED, CERAMIC, MO-058, DIP-32	0.300 INCH, CERAMIC, DIP-32
状态	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
工艺	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	IN-LINE	IN-LINE	IN-LINE
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子间距	2.54 mm	2.54 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	2.54 mm
端子涂层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子位置	DUAL	DUAL	DUAL	QUAD	DUAL	DUAL	DUAL
包装材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
温度等级	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
内存宽度	8	8	8	8	8	8	8
组织	32K X 8	32K X 8	32K X 8	32K X 8	32K X 8	32K X 8	32K X 8
存储密度	262144 deg	262144 deg	262144 deg	262144 deg	262144 deg	262144 deg	262144 deg
操作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
内存IC类型	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
串行并行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
位数	32K	32K	32K	32K	32K	32K	32K

推荐资源

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多