32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32
32K × 8 非易失性存储器, 45 ns, CDIP32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Simtek |
| 包装说明 | DIP, DIP28,.3 |
| Reach Compliance Code | unknow |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 35 ns |
| 其他特性 | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 |
| JESD-30 代码 | R-CDIP-T32 |
| JESD-609代码 | e0 |
| 长度 | 40.635 mm |
| 内存密度 | 262144 bi |
| 内存集成电路类型 | NON-VOLATILE SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 32 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 4.12 mm |
| 最大待机电流 | 0.003 A |
| 最大压摆率 | 0.09 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| STK14C88-5C35M | STK14C88-5K35M | STK14C88-5K45M | STK14C88-5L45M | STK14C88-5C45M | STK14C88-5L35M | |
|---|---|---|---|---|---|---|
| 描述 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CQCC32 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32 | 32K X 8 NON-VOLATILE SRAM, 45 ns, CDIP32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Simtek | Simtek | Simtek | Simtek | Simtek | Simtek |
| 包装说明 | DIP, DIP28,.3 | DIP, | DIP, | QCCN, LCC32,.45X.55 | DIP, DIP28,.3 | QCCN, LCC32,.45X.55 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 35 ns | 35 ns | 45 ns | 45 ns | 45 ns | 35 ns |
| JESD-30 代码 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 | R-CQCC-N32 | R-CDIP-T32 | R-CQCC-N32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 40.635 mm | 40.635 mm | 40.635 mm | 13.97 mm | 40.635 mm | 13.97 mm |
| 内存密度 | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bi |
| 内存集成电路类型 | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | QCCN | DIP | QCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT APPLICABLE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 4.12 mm | 4.12 mm | 4.12 mm | 2.45 mm | 4.12 mm | 2.45 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT APPLICABLE |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 11.43 mm | 7.62 mm | 11.43 mm |
| 其他特性 | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | - | - | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 | EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000 |
| 端口数量 | 1 | - | - | 1 | 1 | 1 |
| 输出特性 | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | - | - | YES | YES | YES |
| 封装等效代码 | DIP28,.3 | - | - | LCC32,.45X.55 | DIP28,.3 | LCC32,.45X.55 |
| 电源 | 5 V | - | - | 5 V | 5 V | 5 V |
| 最大待机电流 | 0.003 A | - | - | 0.003 A | 0.003 A | 0.003 A |
| 最大压摆率 | 0.09 mA | - | - | 0.085 mA | 0.085 mA | 0.09 mA |
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