SS8P2L, SS8P3L
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop
• Low power loss, high efficiency
1
2
Available
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
SMPC (TO-277A)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 8.0 A
T
J
max.
Package
Circuit configuration
8.0 A
20 V, 30 V
150 A
20 mJ
0.472 V
150 °C
SMPC (TO-277A)
Single
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
AS
= 2 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
SS8P2L
S82
20
8.0
150
20
-55 to +150
A
mJ
°C
SS8P3L
S83
30
V
UNIT
Revision: 22-Mar-18
Document Number: 89001
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS8P2L, SS8P3L
www.vishay.com
Vishay General Semiconductor
SYMBOL
TEST CONDITIONS
I
F
= 4.0 A
I
F
= 8.0 A
I
F
= 4.0 A
I
F
= 8.0 A
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
TYP.
0.447
0.533
0.357
0.472
55
24
330
MAX.
-
0.57
-
0.49
200
35
-
μA
mA
pF
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
V
F
(1)
Maximum reverse current
Typical junction capacitance
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
I
R (2)
C
J
V
R
= 30 V
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
SS8P2L
60
3.5
SS8P3L
UNIT
°C/W
R
JL
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS8P3L-M3/86A
SS8P3L-M3/87A
SS8P3LHM3_A/H
(1)
SS8P3LHM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.1
0.1
0.1
0.1
PREFERRED PACKAGE CODE BASE QUANTITY
86A
87A
H
I
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 22-Mar-18
Document Number: 89001
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS8P2L, SS8P3L
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Instantaneous Reverse Current (mA)
10
1000
100
10
1
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
T
A
= 25 °C
T
A
= 125 °C
Average Forward Current (A)
Resistive or Inductive Load
8
T
A
= 150 °C
6
4
2
T
L
measured
at the Cathode Band Terminal
0
25
50
75
100
125
150
175
0
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
5
D = 0.2
1000
4
D = 0.1
D = 1.0
3
2
T
1
D = t
p
/T
t
p
0
0
1
2
3
4
5
6
7
8
9
Junction Capacitance (pF)
D = 0.3
D = 0.5 D = 0.8
Average Power Loss (W)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 25 °C
0.1
100
Junction to Ambient
10
0.01
0
0.2
0.4
0.6
0.8
1.0
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 22-Mar-18
Document Number: 89001
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS8P2L, SS8P3L
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 22-Mar-18
Document Number: 89001
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000