SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection Diodes
Features
•
•
•
•
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance
with
IEC
61000-4-2
(IEC 801-2)
Ideal for EFT protection of data lines in
accordance with IEC 61000-4-4 (IEC 801-4)
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
Low incremental surge resistance, excellent
clamping capability
200 W peak pulse power capability with a
10/1000 µs waveform, repetition rate (duty cycle):
0.01 %
Very fast response time
High
temperature
soldering
guaranteed:
260 °C/10 s at terminals
AEC Q101 qualified
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
17249
•
•
•
•
Mechanical Data
Case:
JEDEC DO-219AB (SMF
®
) plastic case
Terminals:
Solder
plated,
solderable
per
MIL-STD-750, method 2026
Polarity:
The band denotes the cathode which is
positive with respect to the anode under normal TVS
operation
Mounting position:
any
Weight:
approx. 15 mg
•
•
•
•
•
•
Ordering Information/Packaging Codes
SMF5V0A-GSxx
GS08 = 3K per 7" reel (8 mm tape)
GS18 = 10K per 13" reel (8 mm tape)
Part number
SMF5V0A-M-xx
08 = 3K per 7" reel (8 mm tape)
18 = 10K per 13" reel (8 mm tape)
Environmental suffix -M- defines halogen-free
Part number
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak pulse power dissipation
Peak pulse current
Peak forward surge current
Test conditions
10/1000 µs waveform
1)
8/20 µs waveform
1)
10/1000 µs waveform
1)
8.3 ms single half sine-wave
Symbol
P
PPM
P
PPM
I
PPM
I
FSM
Value
200
1000
Next table
20
Unit
W
W
A
A
Note
1)
Non-repetitive current pulse and derated above T
A
= 25 °C
Document Number 85811
Rev. 2.3, 27-Oct-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
SMF5V0A to SMF51A
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance
1)
Operating junction and storage
temperature range
Note
1)
Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (
≥
40 µm thick)
Test conditions
Symbol
R
thJA
T
stg
, T
J
Value
180
- 55 to + 150
Unit
K/W
°C
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified. V
F
= 3.5 V at I
F
= 12 A
Breakdown
voltage
Partnumber
Marking
code
1)
Test current
Stand-off
voltage
Maximum
reverse
leakage
at V
WM
I
D
µA
400
400
250
100
50
25
10
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum peak
pulse surge
current
2, 3)
I
PPM
A
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
11.0
10.1
9.3
8.6
8.2
7.7
7.2
5.8
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
Maximum
clamping
voltage
at I
PPM
V
C
V
Junction
capacitance
C
j
at
V
R
= 0 V,
f = 1 MHz
pF
typ.
V
(BR)
V
min.
at I
T
mA
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
WM
V
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
AE
AG
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
1030
1010
850
750
730
670
660
620
570
460
440
420
370
350
340
310
305
207
265
240
225
210
205
190
180
165
160
155
150
145
Notes
1)
Pulse test t
p
≤
5.0 ms
2)
Surge current waveform 10/1000 µs
3)
All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85811
Rev. 2.3, 27-Oct-08
SMF5V0A to SMF51A
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
10
P
PPM
- Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
1
0.1
0.1 µs
17250
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
Figure 1. Peak Pulse Power Rating
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
75
50
25
0
0
25
50
75
100
125
150
175
200
17251
T
A
- Ambient Temperature (°C)
Figure 2. Pulse Derating Curve
150
I
PPM
- Peak Pulse Current, % I
RSM
tr = 10 µs
Peak Value
I
PPM
100
T
J
= 25 °C
Pulse width (td)
is defined as the point
where the peak current
decays to 50 % of I
PPM
Half Value - IPP
2
I
PPM
50
10/1000 s waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
17252
t - Time (ms)
Figure 3. Pulse Waveform
Document Number 85811
Rev. 2.3, 27-Oct-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
SMF5V0A to SMF51A
Vishay Semiconductors
Package Dimensions
in millimeters (inches):
0.85 [0.033]
0.35 [0.014]
0.25 [0.010]
0.05 [0.002]
0.1 [0.004]
1.2 [0.047]
0.8 [0.031]
5
0 [0.000]
Detail Z
enlarged
1.9 [0.075]
1.7 [0.067]
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
1.08 [0.043]
0.88 [0.035]
foot print recommendation:
1.3 [0.051]
1.3 [0.051]
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 [0.055]
2.9 [0.114]
www.vishay.com
4
5
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85811
Rev. 2.3, 27-Oct-08
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