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SIHLR120: 产品描述7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251; 产品类别分立半导体晶体管; 文件大小1MB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHLR120概述

7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

7.7 A, 100 V, 0.27 ohm, N沟道, 硅, POWER, 场效应管, TO-251

SIHLR120规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Vishay(威世)
零件包装代码	TO-252
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	210 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	7.7 A
最大漏极电流 (ID)	7.7 A
最大漏源导通电阻	0.27 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	42 W
最大脉冲漏极电流 (IDM)	31 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRLR120, IRLU120, SiHLR120, SiHLU120

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 5.0 V

3.0

7.1

Single

DPAK

(TO-252)

FEATURES

100

0.27

•

Dynamic dV/dt Rating

Repetitive Avalanche Rated

Surface Mount (IRLR120, SiHLR120)

Straight Lead (IRLU120, SiHLU120)

Available in Tape and Reel

Logic-Level Gate Drive

DS(on)

Specified at V

= 4 V and 5 V

Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

IPAK

(TO-251)

DESCRIPTION

D S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRLU, SiHLU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHLR120-GE3

IRLR120PbF

SiHLR120-E3

DPAK (TO-252)

SiHLR120TRL-GE3

IRLR120TRLPbF

SiHLR120TL-E3

DPAK (TO-252)

SiHLR120TR-GE3

IRLR120TRPbF

SiHLR120T-E3

DPAK (TO-252)

SiHLR120TRR-GE3

IRLR120TRRPbF

SiHLR120TR-E3

IPAK (TO-251)

SiHLU120-GE3

IRLU120PbF

SiHLU120-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB

Mount)

= 25 °C

dV/dt

, T

stg

for 10 s

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche

Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 5.3 mH, R

= 25

,

= 7.7 A (see fig. 12).

c. I



9.2 A, dI/dt



110 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0167-Rev. D, 04-Feb-13

Document Number: 91324

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

at 5.0 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

100

± 10

7.7

4.9

0.33

0.020

210

7.7

4.2

2.5

5.5

- 55 to + 150

260

W/°C

V/ns

°C

UNIT

SIHLR120相似产品对比

	SIHLR120	SIHLR120-E3	SIHLR120TL	SIHLR120TL-E3	SIHLR120TR-E3	SIHLU120-E3
描述	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251	7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
是否无铅	含铅	不含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	不符合	符合	不符合	符合	符合	符合
零件包装代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	210 mJ	210 mJ	210 mJ	210 mJ	210 mJ	210 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (Abs) (ID)	7.7 A	7.7 A	7.7 A	7.7 A	7.7 A	7.7 A
最大漏极电流 (ID)	7.7 A	7.7 A	7.7 A	7.7 A	7.7 A	7.7 A
最大漏源导通电阻	0.27 Ω	0.27 Ω	0.27 Ω	0.27 Ω	0.27 Ω	0.27 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609代码	e0	e3	e0	e3	e3	e3
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
峰值回流温度（摄氏度）	240	260	240	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	42 W	42 W	42 W	42 W	42 W	42 W
最大脉冲漏极电流 (IDM)	31 A	31 A	31 A	31 A	31 A	31 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	NO
端子面层	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	40	30	40	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	-	Vishay(威世)	Vishay(威世)
湿度敏感等级	-	1	-	1	1	1

SIHLR120

SIHLR120概述

SIHLR120规格参数

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