IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 400
V
GS
= - 10 V
13
3.2
5.0
Single
7.0
FEATURES
•
•
•
•
•
•
•
P-Channel
Surface Mount (IRFR9310/SiHFR9310)
Straight Lead (IRFU9310/SiHFU9310)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
S
D PAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9310PbF
SiHFR9310-E3
IRFR9310
SiHFR9310
DPAK (TO-252)
IRFR9310TRLPbF
a
SiHFR9310TL-E3
a
IRFR9310TRL
a
SiHFR9310TL
a
DPAK (TO-252)
IRFR9310TRPbF
a
SiHFR9310T-E3
a
IRFR9310TR
a
SiHFR9310T
a
DPAK (TO-252)
IRFR9310TRRPbF
a
SiHFR9310TR-E3
a
-
-
IPAK (TO-251)
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 400
± 20
- 1.8
- 1.1
- 7.2
0.40
92
- 1.8
5.0
50
- 24
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
T
C
= 25 °C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 57 mH, R
G
= 25
Ω,
I
AS
= - 1.8 A (see fig. 12).
c. I
SD
≤
- 1.1 A, dI/dt
≤
450 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
www.kersemi.com
1
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
2.5
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= - 400 V, V
GS
= 0 V
V
DS
= - 320 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.1 A
b
V
DS
= - 50 V, I
D
= - 1.1 A
- 400
-
- 2.0
-
-
-
-
0.91
-
-
-
-
-
-
-
-
-
-
-
- 0.41
-
-
-
-
-
-
270
50
8.0
-
-
-
11
10
25
24
4.5
7.5
-
-
- 4.0
± 100
- 100
- 500
7.0
-
-
-
-
13
3.2
5.0
-
-
-
-
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
I
D
= - 1.1 A, V
DS
= - 320 V,
see fig. 6 and 13
b
pF
V
GS
= - 10 V
nC
V
DD
= - 200 V, I
D
= - 1.1 A,
R
G
= 21
Ω,
R
D
= 180
Ω,
see fig. 10
b
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
c
D
-
-
nH
G
-
S
-
-
-
-
-
-
-
-
170
640
- 1.9
A
- 7.6
- 4.0
260
960
V
ns
nC
G
S
T
J
= 25 °C, I
S
= - 1.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= -1.1 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. This is applied for IPAK, L
S
of DPAK is measured between lead and center of die contact.
www.kersemi.com
2
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
10
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
1
1
-4.5V
0.1
1
10
20μs PULSE WIDTH
T
J
= 25
°
C
100
0.1
4
5
6
7
V DS = -50V
20μs PULSE WIDTH
8
9
10
-V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
-V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2.5
I
D
= -1.8A
2.0
1.5
1
-4.5V
1.0
0.5
0.1
20μs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.0
-60 -40 -20
V
GS
= -10V
0
20
40
60
80 100 120 140 160
-V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
www.kersemi.com
3
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
500
400
300
Ciss
-I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
C, Capacitance (pF)
T
J
= 150
°
C
1
200
Coss
100
T
J
= 25
°
C
Crss
0
1
10
100
0.1
1.0
V
GS
= 0 V
2.0
3.0
4.0
5.0
-V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
-V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= -1.1A
V
DS
=-320V
V
DS
=-200V
V
DS
=-80V
100
-V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
-I
D
, Drain Current (A)
I
10
10us
12
100us
1
1ms
8
4
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
10ms
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
-V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.kersemi.com
4
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
R
D
2.0
V
GS
V
DS
D.U.T.
+
-
- 10
V
V
DD
1.6
R
G
-I
D
, Drain Current (A)
1.2
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
0.8
Fig. 10a - Switching Time Test Circuit
0.4
t
d(on)
V
GS
10
%
t
r
t
d(off)
t
f
0.0
25
50
75
100
125
150
90
%
V
DS
T
C
, Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.kersemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
