IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
14
6.5
6.5
Single
S
FEATURES
- 50
0.33
•
•
•
•
•
•
•
Surface Mountable (Order as IRFR9022/SiHFR9022)
Available
Straight Lead Option (Order as IRFU9022/SiHFU9022)
RoHS*
Repetitive Avalanche Ratings
COMPLIANT
Dynamic dV/dt Rating
Simple Drive Requirements
Ease of Paralleling
Lead (Pb)-free Available
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9022/SiHFR9022 is provided on 16mm tape. The
straight lead option IRFR9022/SiHFR9022 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9022PbF
SiHFR9022-E3
IRFR9022
SiHFR9022
DPAK (TO-252)
IRFR9022TRPbF
a
SiHFR9022T-E3
a
IRFR9022TR
a
SiHFR9022T
a
DPAK (TO-252)
IRFR9022TRLPbF
a
SiHFR9022TL-E3
a
IRFR9022TRL
a
SiHFR9022TL
a
IPAK (TO-251)
IRFU9022PbF
SiHFU9022-E3
IRFU9022
SiHFU9022
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
1
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
LIMIT
- 50
± 20
- 9.0
- 5.7
- 36
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
WORK-IN-PROGRESS
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
T
C
= 25 °C
P
D
c
dV/dt
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, Starting T
J
= 25 °C, L = 5.1 mH, R
G
= 25
Ω,
Peak I
L
= - 9.9 A
c. I
SD
≤
- 9.9 A, dI/dt
≤
-120 A/µs, V
DD
≤
40 V, T
J
≤
150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
42
5.8
- 55 to + 150
300
d
UNIT
W
V/ns
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
3.0
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact.
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= max. rating, V
GS
= 0 V
V
DS
= 0.8 x max. rating, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= 5.7 A
b
V
DS
≤
- 50 V, I
DS
= - 5.7 A
- 50
- 2.0
-
-
-
-
2.3
-
-
-
-
-
0.28
3.5
-
- 4.0
± 500
250
1000
0.33
-
V
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 9
I
D
= - 9.7 A, V
DS
= 0.8 x max.
rating, see fig. 16
V
GS
= - 10 V
(Independent operating
temperature)
V
DD
= - 25 V, I
D
= - 9.7 A,
R
G
= 18
Ω,
R
D
= 2.4
Ω,
see fig. 15
(Independent operating temperature)
-
-
-
-
-
-
-
-
-
-
-
490
320
70
9.4
4.3
4.3
8.2
57
12
25
4.5
7.5
-
-
-
14
6.5
6.5
12
66
18
38
-
nH
-
ns
nC
pF
G
-
S
www.vishay.com
2
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
-
56
0.17
-
-
-
110
0.34
- 9.9
A
- 40
- 6.3
280
0.85
V
ns
nC
G
S
T
J
= 25 °C, I
S
= - 9.9 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 9,7 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
3
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
www.vishay.com
4
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
5
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