Datasheet> 器件分类 > 分立半导体> 晶体管> SIHFR210T-E3

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SIHFR210T-E3: 产品描述2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; 产品类别分立半导体晶体管; 文件大小816KB，共10页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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SIHFR210T-E3概述

2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

2.6 A, 200 V, 1.5 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA

SIHFR210T-E3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Vishay(威世)
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	95 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (Abs) (ID)	2.6 A
最大漏极电流 (ID)	2.6 A
最大漏源导通电阻	1.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	15 pF
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	25 W
最大脉冲漏极电流 (IDM)	10 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRFR210, IRFU210, SiHFR210, SiHFU210

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

8.2

1.8

4.5

Single

FEATURES

200

1.5

•

Dynamic dV/dt Rating

Repetitive Avalanche Rated

Surface Mount (IRFR210, SiHFR210)

Straight Lead (IRFU210, SiHFU210)

Available in Tape and Reel

Fast Switching

Ease of Paralleling

Material categorization: For definitions of

compliance please see

www.vishay.com/doc?99912

DESCRIPTION

DPAK

(TO-252)

IPAK

(TO-251)

D S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR210-GE3

IRFR210PbF

SiHFR210-E3

DPAK (TO-252)

SiHFR210TRL-GE3

IRFR210TRLPbF

SiHFR210TL-E3

DPAK (TO-252)

IRFR210TRPbF

SiHFR210T-E3

DPAK (TO-252)

SiHFR210TRR-GE3

IPAK (TO-251)

SiHFU210-GE3

IRFU210PbF

SiHFU210-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

200

± 20

2.6

1.7

0.20

0.020

2.7

2.5

5.0

- 55 to + 150

260

UNIT

W/°C

V/ns

°C

= 25 °C

dV/dt

, T

stg

for 10 s

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 28 mH, R

= 25

,

= 2.6 A (see fig. 12).

c. I



2.6 A, dI/dt



70 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0171-Rev. E, 04-Feb-13

Document Number: 91268

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFR210T-E3相似产品对比

	SIHFR210T-E3	SIHFR210	SIHFR210-E3	SIHFR210T	SIHFR210TL	SIHFR210TL-E3	SIHFR210TR	SIHFU210	SIHFU210-E3
描述	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
是否无铅	不含铅	含铅	不含铅	含铅	含铅	不含铅	含铅	含铅	不含铅
是否Rohs认证	符合	不符合	符合	不符合	不符合	符合	不符合	不符合	符合
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-251	TO-251
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
针数	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
雪崩能效等级（Eas）	95 mJ	95 mJ	95 mJ	95 mJ	95 mJ	95 mJ	95 mJ	95 mJ	95 mJ
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
最大漏极电流 (Abs) (ID)	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A
最大漏极电流 (ID)	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A	2.6 A
最大漏源导通电阻	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω	1.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-251	TO-251
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
JESD-609代码	e3	e0	e3	e0	e0	e3	e0	e0	e3
元件数量	1	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
峰值回流温度（摄氏度）	260	240	260	240	240	260	240	240	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W
最大脉冲漏极电流 (IDM)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	NO	NO
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	30	40	30	30	40	30	30	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

SIHFR210T-E3

SIHFR210T-E3概述

SIHFR210T-E3规格参数

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SIHFR210T-E3相似产品对比

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