IRFPE40
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
130
17
72
Single
D
FEATURES
800
2.0
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-247AC
DESCRIPTION
G
S
D
G
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-247AC
IRFPE40PbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
800
± 20
5.4
3.4
22
1.2
490
5.4
15
150
2.0
-55 to +150
300
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
c
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 31 mH, R
g
= 25
Ω,
I
AS
= 5.4 A (see fig. 12).
c. I
SD
≤
5.4 A, dI/dt
≤
120 A/μs, V
DD
≤
600, T
J
≤
150 °C.
d. 1.6 mm from case.
S15-1038-Rev. C, 04-May-15
Document Number: 91247
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPE40
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.83
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.2 A
b
V
DS
= 100 V, I
D
= 3.2 A
b
800
-
2.0
-
-
-
-
3.0
-
-
-
-
-
-
-
-
0.98
-
-
-
-
-
-
1900
470
280
-
-
-
16
36
100
32
5.0
13
-
-
4.0
± 100
100
500
2.0
-
-
-
-
130
17
72
-
-
-
-
-
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 5.4 A, V
DS
= 400 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
nC
V
DD
= 400 V, I
D
= 5.4 A,
R
g
= 9.1
Ω,
R
D
= 75
Ω,
see fig. 10
b
-
-
-
-
-
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
nH
S
-
-
-
-
-
-
-
-
550
2.4
5.4
A
22
1.8
830
3.6
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 5.4 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.4 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
S15-1038-Rev. C, 04-May-15
Document Number: 91247
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPE40
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S15-1038-Rev. C, 04-May-15
Document Number: 91247
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPE40
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S15-1038-Rev. C, 04-May-15
Document Number: 91247
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPE40
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1038-Rev. C, 04-May-15
Document Number: 91247
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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