IRFP9240, SiHFP9240
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) (Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200 V
V
GS
= - 10 V
44
7.1
27
Single
S
FEATURES
• Dynamic dV/dt Rating
0.50
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-247AC
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP9240PbF
SiHFP9240-E3
IRFP9240
SiHFP9240
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 200
± 20
- 12
- 7.5
- 48
1.2
790
- 12
15
150
- 5.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 8.2 mH, R
g
= 25
Ω,
I
AS
= - 12 A (see fig. 12).
c. I
SD
≤
- 12 A, dI/dt
≤
150 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91239
S11-0444-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP9240, SiHFP9240
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.83
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 7.2 A
b
V
DS
= - 50 V, I
D
= - 7.2 A
- 200
-
- 2.0
-
-
-
-
4.2
-
- 0.20
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.50
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
1200
370
81
-
-
-
14
43
39
38
5.0
13
-
-
-
44
7.1
27
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 11 A, V
DS
= - 160 V
see fig. 6 and 13
b
-
-
-
V
DD
= - 100 V, I
D
= - 11 A
R
G
= 9.1
Ω,
R
D
=
8.6
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
250
2.9
- 12
A
- 48
- 5.0
300
3.6
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 12 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 11 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91239
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP9240, SiHFP9240
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91239
S11-0444-Rev. B, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP9240, SiHFP9240
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91239
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP9240, SiHFP9240
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
V
DD
Fig. 10a - Switching Time Test Circuit
t
d(on)
V
GS
10 %
t
r
t
d(off)
t
f
90 %
V
DS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91239
S11-0444-Rev. B, 14-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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