IRFP254N, SiHFP254N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
100
17
44
Single
D
FEATURES
250
0.125
•
•
•
•
•
•
•
•
Advanced Process Technology
Dynamic dV/dt Rating
175 °C Operating Temperature
Fully Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
these Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
G
S
D
G
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247
IRFP254NPbF
SiHFP254N-E3
IRFP254N
SiHFP254N
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
250
± 20
23
16
92
1.5
300
14
22
220
7.4
- 55 to + 175
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 3.1 mH, R
G
= 25
Ω,
I
AS
= 14 A, V
GS
= 10 V.
c. I
SD
≤
14 A, dI/dt
≤
460 A/µs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
www.vishay.com
1
IRFP254N, SiHFP254N
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.68
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 14 A
b
V
DS
= 25 V, I
D
= 14 A
250
-
2.0
-
-
-
-
15
-
0.33
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.125
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
2040
260
62
-
-
-
14
34
37
29
5.0
13
-
-
-
100
17
44
-
-
-
-
-
nH
-
ns
nC
pF
I
D
= 14 A, V
DS
= 200 V,
see fig. 6 and 13
b
V
GS
= 10 V
V
DD
= 125 V, I
D
= 14 A,
R
G
= 3.6
Ω,
see fig. 10
b
-
-
-
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
210
1.7
23
A
92
1.3
310
2.6
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
400 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
IRFP254N, SiHFP254N
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Top
VGS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
4.5
V
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TJ = 175 °C
10
Bottom
10
1
4.5
V
TJ = 25 °C
0.1
0.1
20
µs
PULSE
WIDTH
TJ = 25 °C
100
10
1
V
DS, Drain-to-Source
Voltage
(V)
1
4.0
V
DS = 50
V
20
µs
PULSE
WIDTH
5.0
6.0
8.0
7.0
V
GS, Gate-to-Source
Voltage
(V)
9.0
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
Top
ID, Drain-to-Source Current (A)
VGS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
rDS(on), Drain-to-Source On Resistance (Normalized)
4.0
ID = 23 A
3.0
10
4.5
V
2.0
1.0
1
0.1
1
20
µs
PULSE
WIDTH
TJ = 175 °C
10
100
V
DS, Drain-to-Source
Voltage
(V)
0.0
-60 -40 -20
0
20 40
V
GS = 10
V
60
80
100 120 140 160
TJ, Junction Temperature ( °C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
www.vishay.com
3
IRFP254N, SiHFP254N
Vishay Siliconix
4000
V
GS = 0
V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
Ciss
f = 1 MHz
SHORTED
ISD, Reverse Drain Current (A)
TJ = 175 °C
10
100
3000
C, Capacitance (pF)
2000
Coss
1
TJ = 25 °C
1000
Crss
0
1
10
100
1000
V
DS, Drain-to-Source
Voltage
(V)
0.1
0.2
V
GS = 0
V
0.8
0.4
1.0
0.6
V
SD, Source-to-Drain
Voltage
(V)
1.2
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 14 A
V
GS, Gate-to-Source
Voltage
(V)
V
DS = 200
V
V
DS = 125
V
V
DS = 50
V
100
12
ID, Drain Current (A)
1000
OPERATING IN THIS AREA LIMITED
BY RDS(on)
16
10
100
µs
1 ms
8
4
For Test Circuit
See Fig. 13
0
20
40
60
80
100
1
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10
100
10 ms
0
0.1
1000
10000
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
V
DS, Drain-to-Source
Voltage
(V)
www.vishay.com
4
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
IRFP254N, SiHFP254N
Vishay Siliconix
R
D
25
V
DS
V
GS
20
ID, Drain Current (A)
R
G
D.U.T.
+
-
V
DD
15
V
GS
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
5
0
25
50
75
100
125
150
175
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
Thermal Response (ZthJC)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
t 1, Rectangular Pulse Duration (s)
0.01
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
www.vishay.com
5
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