IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
150
44
72
Single
D
FEATURES
500
0.190
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
APPLICATIONS
• Zero Voltage Switching SMPS
G
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
S
N-Channel MOSFET
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247AC
IRFP23N50LPbF
SiHFP23N50L-E3
IRFP23N50L
SiHFP23N50L
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
500
± 30
23
15
92
2.9
410
23
37
370
21
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Repetitive Avalanche Current
a
Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 1.5 mH, R
g
= 25
,
I
AS
= 23 A (see fig. 12).
c. I
SD
23 A, dI/dt
650 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.34
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=1 25 °C
T
J
= 25 °C
I
F
= 23 A,
dI/dt = 100 A/μs
b
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss
eff. (ER)
R
G
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 14
A
b
V
DS
= 50 V, I
D
= 14
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 400 V , f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 400 V
c
V
DS
= 0 V to 400 V
d
f = 1 MHz, open drain
V
GS
= 10 V
I
D
= 23 A, V
DS
= 400 V
see fig. 6 and 13
b
A
b
mA
d
V
DS
= V
GS
, I
D
= 250 μA
MIN.
500
-
3.0
-
-
-
-
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.27
-
-
-
-
0.190
-
3600
380
37
4800
100
220
160
1.2
-
-
-
26
94
53
45
MAX.
-
-
5.0
± 100
50
2.0
0.235
-
-
-
-
-
-
-
-
-
150
44
72
-
-
-
-
UNIT
V
V/°C
V
nA
μA
mA
S
pF
nC
V
DD
= 250 V, I
D
= 23 A
R
g
= 6.0, V
GS
= 10 V
see fig. 10
b
ns
-
-
-
-
-
-
-
-
-
-
-
170
220
560
980
7.6
23
A
92
1.5
250
330
840
1500
11
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising fom 0 % to 80 % V
DS
.
d. C
oss
eff. (ER) is a fixed capacitance that stores the same energy time as C
oss
while V
DS
is rising fom 0 % to 80 % V
DS
.
www.vishay.com
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Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
TOP
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to Source Current (A)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000.00
T
J
= 25 °C
100.00
1
T
J
= 150 °C
0.1
10.00
0.01
4.5 V
20µs PULSE WIDTH
Tj = 25 °C
20 µs PULSE WIDTH
1.00
0.001
0.1
1
10
100
T
J
= 150°C
1.0
6.0
11.0
16.0
V
DS
, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
R
DS(ON)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
I
D
= 23 A
2.5
2.0
1.5
1
4,5 V
1.0
20µs PULSE WIDTH
Tj = 150 °C
0.1
0.5
V
GS
= 10 V
0.0
1
10
100
-60
-40
-20
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
T
J,
Junction Temperature
(°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100000
C, Capacitance (pF)
10000
V
GS
= 0 V,
f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
Ciss
I
D
, Drain Current (A)
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(ON)
100
10us
1000
100us
10
1ms
Coss
100
Crss
10
1
10
100
1000
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
10ms
1000
10000
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Maximum Safe Operating Area
25
12
I
D
= 23
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
20
V
GS
, Gate-to-Source Voltage (V)
10
Energy (µJ)
15
7
10
5
5
2
0
0
100
200
300
400
500
600
0
0
24
48
72
96
120
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100.00
V
DS
R
D
I
SD
, Reverse Drain Current (A)
T
J
= 150 °C
V
GS
R
G
D.U.T.
+
-
V
DD
10.00
10 V
T
J
= 25 °C
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
1.00
Fig. 11a - Switching Time Test Circuit
V
GS
= 0 V
0.10
0.0
0.5
1.0
1.5
2.0
V
DS
90 %
V
SD
, Source-to-Drain Voltage (V)
Fig. 9 - Typical Source-Drain Diode Forward Voltage
25
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
20
I
D
, Drain Current (A)
Fig. 11b - Switching Time Waveforms
15
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature
(°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.1
0.20
0.10
0.05
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D =
t1 / t2
2. PeakT
J = P DM x Z thJC + T C
0.01
0.02
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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