IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
12
3.8
5.1
Single
S
FEATURES
-60
0.50
•
•
•
•
•
•
•
•
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Available
P-channel
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SOT-223
D
S
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
G
D
D
Marking code: FE
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL9014-GE3
IRFL9014PbF
SiHFL9014-E3
SOT-223
SiHFL9014TR-GE3
IRFL9014TRPbF
a
SiHFL9014T-E3
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
for 10 s
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 50 mH, R
g
= 25
,
I
AS
= - 1.8 A (see fig. 12).
c. I
SD
- 6.7 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S14-1686-Rev. F, 18-Aug-14
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
-60
± 20
-1.8
-1.1
-14
0.025
0.017
140
-1.8
0.31
3.1
2.0
-4.5
-55 to +150
300
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Document Number: 91195
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
60
40
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= -10 V
I
D
= 1.1 A
b
V
DS
= - 25 V, I
D
= 1.1 A
b
-60
-
-2.0
-
-
-
-
1.3
-
-0.059
-
-
-
-
-
-
-
-
-4.0
± 100
- 100
-500
0.50
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
270
170
31
-
-
-
11
63
9.6
31
4.0
6.0
-
-
-
12
3.8
5.1
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 30 V, I
D
= - 6.7 A,
R
g
= 24
,
R
D
= 4.0
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
80
0.096
- 1.8
A
- 14
- 5.5
160
0.19
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 1.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
V
GS
-
15 V
Vishay Siliconix
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
Top
- I
D
, Drain Current (A)
10
1
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
I
D
= - 6.7 A
V
GS
= 10 V
2.0
1.5
10
0
1.0
4.5 V
10
-1
20 µs Pulse Width
T
C
=
25 °C
10
-1
10
0
10
1
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
91195_01
- V
DS
, Drain-to-Source Voltage (V)
91195_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
600
10
1
- I
D
, Drain Current (A)
500
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
400
300
200
100
0
10
0
10
1
C
iss
C
oss
10
0
Top
V
GS
-
15 V
4.5 V
10
-1
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom -4.5 V
20 µs Pulse Width
T
C
=
150 °C
10
1
C
rss
10
0
91195_02
- V
DS,
Drain-to-Source Voltage (V)
91195_05
- V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
25
°
C
150
°
C
- V
GS
, Gate-to-Source Voltage (V)
10
1
I
D
= -6.7 A
V
DS
= -48 V
- I
D
, Drain Current (A)
16
V
DS
= -30 V
12
10
0
8
10
-1
20 µs Pulse Width
V
DS
=
- 25 V
4
5
6
7
8
9
10
4
For test circuit
see figure 13
0
0
91195_06
4
8
12
16
91195_03
- V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
2.0
- I
SD
, Reverse Drain Current (A)
10
1
25
°
C
- I
D
, Drain Current (A)
V
GS
= 0 V
5.0
6.0
91195_09
150
°
C
1.5
1.0
10
0
0.5
10
-1
1.0
91195_07
0.0
2.0
3.0
4.0
25
50
75
100
125
150
- V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
2
5
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
D.U.T.
+
-
V
DD
Operation in this area limited
by R
DS(on)
- I
D
, Drain Current (A)
2
10
5
2
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
2
5
R
g
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
1
5
Fig. 10a - Switching Time Test Circuit
2
0.1
0.1
91195_08
1
2
5
10
2
5
10
2
2
5
10
3
t
d(on)
V
GS
10 %
t
r
t
d(off)
t
f
- V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
90 %
V
DS
Fig. 10b - Switching Time Waveforms
10
2
Thermal Response (Z
τηJC
)
0
−
0.5
10
0.2
0.1
0.05
1
0.02
0.01
0.1
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
10
-5
91195_11
10
-4
10
-3
10
-2
0.1
1
10
10
2
10
3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
I
AS
D.U.T
I
AS
V
DS
-
+ V
DD
t
p
V
DD
- 10 V
t
p
0.01
Ω
V
DS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
400
E
AS
, Single Pulse Energy (mJ)
300
I
D
- 0.80 A
- 1.1 A
Bottom - 1.8 A
Top
200
100
0
V
DD
= - 25 V
25
50
75
100
125
150
91195_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12 V
- 10 V
Q
GS
Q
G
0.2 µF
0.3 µF
V
G
V
GS
- 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
S14-1686-Rev. F, 18-Aug-14
Document Number: 91195
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
+
D.U.T.
-
Q
GD
V
DS
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