IRFIBE30G, SiHFIBE30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
78
9.6
45
Single
D
FEATURES
800
3.0
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
G
S
G D S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFIBE30GPbF
SiHFIBE30G-E3
IRFIBE30G
SiHFIBE30G
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
800
± 20
2.1
1.4
8.4
0.28
240
2.1
3.5
35
2.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 102 mH, R
G
= 25
Ω,
I
AS
= 2.1 A (see fig. 12).
c. I
SD
≤
4.1 A, dI/dt
≤
100 A/µs, V
DD
≤
600 V, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
www.vishay.com
1
IRFIBE30G, SiHFIBE30G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.3 A
b
V
DS
= 50 V, I
D
= 1.3 A
b
800
-
2.0
-
-
-
-
1.7
-
0.90
-
-
-
-
-
-
-
-
4.0
± 100
100
500
3.0
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
I
D
= 4.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
-
-
1300
310
190
12
-
-
-
12
33
82
30
4.5
7.5
-
-
-
-
78
9.6
45
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
-
-
-
V
DD
= 400 V, I
D
= 4.1 A,
R
G
= 12
Ω
,
R
D
= 95
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
480
1.8
2.1
A
8.4
1.8
720
2.7
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 2.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4.1 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
IRFIBE30G, SiHFIBE30G
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
www.vishay.com
3
IRFIBE30G, SiHFIBE30G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
IRFIBE30G, SiHFIBE30G
Vishay Siliconix
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
t
p
V
DD
D.U.T
I
AS
10
V
t
p
0.01
Ω
I
AS
+
-
V
DD
V
DS
V
DS
Fig. 9a - Unclamped Inductive Test Circuit
Fig. 9b - Unclamped Inductive Waveforms
Fig. 9c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12
V
0.2
µF
0.3
µF
V
GS
Q
GS
Q
G
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 10a - Basic Gate Charge Waveform
Fig. 10b - Gate Charge Test Circuit
Document Number: 91184
S-81352-Rev. A, 16-Jun-08
www.vishay.com
5
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