IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
92
24
44
Single
D
FEATURES
500
0.320
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Reqirements
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
RoHS
COMPLIANT
TO-220 FULLPAK
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free
APPLICATIONS
G
G D S
S
N-Channel
MOSFET
•
•
•
•
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control Applications
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220 FULLPAK
IRFIB7N50LPbF
SiHFIB7N50L-E3
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
6.8
4.3
27
0.37
550
6.8
4.6
46
24
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting T
J
= 25 °C, L = 24 mH, R
G
= 25
Ω,
I
AS
= 6.8 A (see fig. 14).
c. I
SD
≤
6.8 A, dI/dt
≤
650 A/µs, V
DD
≤
V
DS
, dV/dt = 24 V/ns, T
J
≤
150 °C.
d. 1.6 mm from case.
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
1
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
2.69
UNIT
°C/W
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Current
I
RRM
T
J
= 25 °C
-
5.9
8.9
A
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
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2
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
I
S
I
SM
V
SD
t
rr
Q
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
S
= 6.8 A, V
GS
= 0 V
b
G
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss
eff. (ER)
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 4.1
A
b
V
DS
= 50 V, I
D
= 4.1 A
500
-
3.0
-
-
-
-
4.7
-
-
-
-
-
-
-
0.44
-
-
-
-
0.32
-
2220
230
23
2780
63
140
100
-
-
-
0.88
23
36
47
19
-
-
-
85
130
280
570
-
-
5.0
± 100
50
2.0
0.38
-
-
-
-
-
-
-
-
92
24
44
-
-
-
-
-
6.8
V
V/°C
V
nA
µA
mA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
DS
= 400 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 400 V
c
pF
-
-
V
GS
= 10 V
I
D
= 6.8 A, V
DS
= 400 V,
see fig. 7 and 16
b
-
-
nC
f = 1 MHz, open drain
V
DD
= 250 V, I
D
= 6.8 A,
R
G
= 9.0
Ω,
see fig. 11a and 11b
b
-
-
-
-
-
-
-
-
-
-
-
-
Ω
V
GS
= 10 V
ns
A
27
1.5
130
200
420
860
V
ns
nC
S
T
J
= 25 °C, I
F
= 6.8 A,
T
J
= 125 °C, dI/dt = 100 A/µs
b
T
J
= 25 °C, I
S
= 6.8 A,
T
J
= 125 °C, dI/dt = 100 A/µs
b
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
10
BOTTOM
ID, Drain-to-Source Current (Α)
ID, Drain-to-Source Current (A)
10
TJ = 150 °C
1
5.0V
0.1
1
T J = 25 °C
≤60μs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
VDS = 50 V
≤ 60 μs PULSE WIDTH
0.1
3
4
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
2.5
ID = 6.8A
VGS = 10V
10
BOTTOM
2.0
5.0V
1.5
1
1.0
0.5
≤60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
3
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
12.0
ID= 6.8A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
10000
C oss = C ds + C gd
10.0
VDS= 400V
C, Capacitance(pF)
8.0
6.0
Ciss
1000
Coss
100
4.0
Crss
10
1
10
100
1000
2.0
0.0
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
12
100.00
ISD, Reverse Drain Current (A)
10
10.00
T J = 150°C
8
Energy (μJ)
6
1.00
4
T J = 25°C
0.10
2
0
0
50 100 150 200 250 300 350 400 450 500 550
VDS, Drain-to-Source Voltage (V)
VGS = 0V
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
100
V
DS
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
ID, Drain-to-Source Current (A)
10
100μsec
10
V
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1msec
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 11a - Switching Time Test Circuit
10msec
1000
10000
V
DS
90
%
0.01
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
7
6
ID, Drain Current (A)
Fig. 11b - Switching Time Waveforms
5
4
3
2
1
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
Document Number: 91177
S09-0063-Rev. A, 02-Feb-09
www.vishay.com
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