IRFI9Z34G, SiHFI9Z34G
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
34
9.9
16
Single
S
FEATURES
-60
0.14
• Isolated package
• High voltage isolation = 2.5 kV
RMS
(t = 60 s;
Available
f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
Available
• P-channel
• 175 °C operating temperature
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220 FULLPAK
G
DESCRIPTION
D
G D S
P-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI9Z34GPbF
SiHFI9Z34G-E3
IRFI9Z34G
SiHFI9Z34G
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
b
SYMBOL
V
DS
V
GS
V
GS
at -10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
d
LIMIT
-60
± 20
-12
-8.5
-48
0.28
370
-12
4.2
42
-4.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 3.0 mH, R
G
= 25
,
I
AS
= -12 A (see fig. 12).
c. I
SD
-12 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
S16-0763-Rev. B, 02-May-16
Document Number: 91172
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
C
iss
C
oss
C
rss
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
R
g
Between lead,
6 mm (0.25") from
package and center of
die contact
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= -1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= -10 V
I
D
= -7.2 A
b
V
DS
= -25 V, I
D
= -7.2 A
b
MIN.
-60
-
-2.0
-
-
-
-
5.4
-
-
-
-
-
-
-
-
TYP.
-
-0.060
-
-
-
-
-
-
1100
620
100
12
-
-
-
18
120
20
58
4.5
MAX.
-
-
-4.0
± 100
-100
-500
0.14
-
-
-
-
-
34
9.9
16
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
V
GS
= -10 V
I
D
= -18 A, V
DS
= -48 V,
see fig. 6 and 13
b
pF
nC
V
DD
= -30 V, I
D
= -18 A,
R
G
= 12
,
R
D
= 1.5
,
see fig. 10
b
-
-
-
-
ns
G
nH
S
Internal Source Inductance
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
-
0.7
7.5
-
-
3.9
f = 1 MHz, open drain
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p -n junction diode
D
-
-
-
-
-
-
-
-
100
0.28
-12
A
-48
-6.3
200
0.52
V
ns
μC
G
S
T
J
= 25 °C, I
S
= -12 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= -18 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited
by
maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0763-Rev. B, 02-May-16
Document Number: 91172
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0763-Rev. B, 02-May-16
Document Number: 91172
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. B, 02-May-16
Document Number: 91172
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFI9Z34G, SiHFI9Z34G
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
- 10
V
Pulse
width
≤
1 µs
Duty factor
≤
0.1 %
V
DD
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
I
AS
V
DS
D.U.T
I
AS
-
+
V
DD
t
p
0.01
Ω
V
DS
Fig. 12b - Unclamped Inductive Waveforms
V
DD
- 10
V
t
p
Fig. 12a - Unclamped Inductive Test Circuit
S16-0763-Rev. B, 02-May-16
Document Number: 91172
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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