IRFI9610G, SiHFI9610G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
13
3.2
7.3
Single
S
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• P-Channel
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
3.0
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
G
G D S
D
P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI9640GPbF
SiHFI9640G-E3
IRFI9640G
SiHFI9640G
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 200
± 20
- 2.0
- 1.3
- 8.0
0.22
100
- 2.0
2.7
27
- 11
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 51 mH, R
G
= 25
Ω,
I
AS
= - 2.0 A (see fig. 12).
c. I
SD
≤
- 2.0 A, dI/dt
≤
- 250 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
www.vishay.com
1
IRFI9610G, SiHFI9610G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
4.6
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.2 A
b
V
DS
= - 50 V, I
D
= - 1.2 A
b
- 200
-
- 2.0
-
-
-
-
0.7
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
180
66
12
-
-
-
12
17
19
15
4.5
7.5
-
-
-
13
3.2
7.3
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 2.0 A, V
DS
= - 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 100 V, I
D
= - 2.0 A,
R
G
= 24
Ω
,
V
GS
= - 10 V,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
130
700
- 2.0
A
- 8.0
- 5.8
200
1050
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 2.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 2.0 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
IRFI9610G, SiHFI9610G
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
10
TJ = 25°C
-I D, Drain-to-Source Current
(Α
)
-I D, Drain-to-Source Current (A)
T J = 150°C
1
-4.5V
0.1
1
0.01
0.1
1
20µs PULSE
WIDTH
Tj = 25°C
0
V
DS = -50V
20µs PULSE
WIDTH
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
10
100
-VDS, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
-VGS , Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
10
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
1
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2.5
ID = -2.0A
V
GS = -10V
2.0
(Normalized)
-4.5V
0.1
1.5
1.0
20µs PULSE
WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.5
-60 -40 -20
0
20
40
60
80
100 120 140 160
-VDS, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
T J , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
www.vishay.com
3
IRFI9610G, SiHFI9610G
Vishay Siliconix
400
350
300
10.0
V
GS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
-I SD, Reverse Drain Current (A)
T J = 150°C
C, Capacitance (pF)
250
200
150
Ciss
1.0
TJ = 25°C
Coss
100
50
0
1
10
100
Crss
0.1
0.0
1.0
2.0
3.0
V
GS = 0V
4.0
5.0
-VDS, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
-VSD, Source-toDrain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID= -2.0A
100
V
DS= -160V
VDS=
-100V
VDS=
-40V
-V GS, Gate-to-Source
Voltage
(V)
16
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
12
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
-VDS , Drain-toSource
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
10msec
0
0
2
4
6
8
10
12
14
Q G Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
0.1
1000
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4
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
IRFI9610G, SiHFI9610G
Vishay Siliconix
R
D
2.0
V
GS
V
DS
D.U.T.
+
-
V
DD
1.6
R
G
-ID , Drain Current (A)
10
V
1.2
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
0.8
Fig. 10a - Switching Time Test Circuit
V
DS
0.4
90
%
0.0
25
50
75
100
125
150
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
T J , Junction Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
V
DS
I
AS
+
-
Driver
0.01
Ω
15
V
D.U.T.
I
AS
V
DD
A
R
G
- 20
V
t
p
t
p
V
DS
Fig. 12b - Unclamped Inductive Waveforms
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5
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91165
S09-0011-Rev. A, 19-Jan-09
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