IRFD214, SiHFD214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.2
1.8
4.5
Single
D
FEATURES
250
2.0
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
G
S
D
G
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD214PbF
SiHFD214-E3
IRFD214
SiHFD214
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
250
± 20
0.45
0.29
3.6
0.0083
57
0.45
0.10
1.0
4.8
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Avalanche
Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28 mH, R
g
= 25
,
I
AS
= 1.8 A (see fig. 12).
c. I
SD
2.7 A, dI/dt
65 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91130
S10-2462-Rev. C, 08-Nov-10
www.vishay.com
1
IRFD214, SiHFD214
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 0.27 A
b
V
DS
= 50 V, I
D
= 1.6 A
250
-
2.0
-
-
-
-
0.90
-
0.39
-
-
-
-
-
-
-
-
4.0
± 100
25
250
2.0
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
140
42
9.6
-
-
-
7.0
7.6
16
7.0
4.0
6.0
-
-
-
8.2
1.8
4.5
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 2.7 A, V
DS
= 200 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 125 V, I
D
= 2.7 A,
R
g
= 24
,
R
D
= 45
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
190
0.64
0.45
A
3.6
2.0
390
1.3
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 0.45 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91130
S10-2462-Rev. C, 08-Nov-10
IRFD214, SiHFD214
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
T
A
= 25 °C
Fig. 1 - Typical Output Characteristics, T
A
= 25 °C
Fig. 3 - Typical Transfer Characteristics
T
A
= 150 °C
Fig. 2 - Typical Output Characteristics, T
A
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91130
S10-2462-Rev. C, 08-Nov-10
www.vishay.com
3
IRFD214, SiHFD214
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
A
= 25 °C
T
J
= 150 °C
SINGLE
PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91130
S10-2462-Rev. C, 08-Nov-10
IRFD214, SiHFD214
Vishay Siliconix
V
DS
V
GS
R
g
R
D
D.U.T.
+
- V
DD
I
D
, Drain Current (A)
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
T
A
, Ambient Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (Z
thJA
)
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Document Number: 91130
S10-2462-Rev. C, 08-Nov-10
www.vishay.com
5
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