1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
1.7 A, 900 V, 8 ohm, N沟道, 硅, POWER, 场效应管, TO-263AB
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 |
| Reach Compliance Code | unknow |
| 其他特性 | AVALANCHE RATED |
| 雪崩能效等级（Eas） | 180 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 900 V |
| 最大漏极电流 (Abs) (ID) | 1.7 A |
| 最大漏极电流 (ID) | 1.7 A |
| 最大漏源导通电阻 | 8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 240 |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 54 W |
| 最大脉冲漏极电流 (IDM) | 6.8 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| SIHFBF20STL | SIHFBF20L | SIHFBF20L-E3 | SIHFBF20S | SIHFBF20S-E3 | SIHFBF20STL-E3 | SIHFBF20STR | SIHFBF20STR-E3 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 是否无铅 | 含铅 | 含铅 | 不含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 | 不含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 | 符合 | 符合 | 不符合 | 符合 |
| 零件包装代码 | D2PAK | TO-262AA | TO-262AA | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 | 3 | 3 | 4 | 4 | 4 | 4 | 4 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
| 其他特性 | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
| 雪崩能效等级（Eas） | 180 mJ | 180 mJ | 180 mJ | 180 mJ | 180 mJ | 180 mJ | 180 mJ | 180 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 900 V | 900 V | 900 V | 900 V | 900 V | 900 V | 900 V | 900 V |
| 最大漏极电流 (Abs) (ID) | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A |
| 最大漏极电流 (ID) | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A | 1.7 A |
| 最大漏源导通电阻 | 8 Ω | 8 Ω | 8 Ω | 8 Ω | 8 Ω | 8 Ω | 8 Ω | 8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | TO-262AA | TO-262AA | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e3 | e0 | e3 | e3 | e0 | e3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 3 | 2 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 240 | 240 | 260 | 240 | 260 | 260 | 240 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 54 W | 54 W | 54 W | 54 W | 54 W | 54 W | 54 W | 54 W |
| 最大脉冲漏极电流 (IDM) | 6.8 A | 6.8 A | 6.8 A | 6.8 A | 6.8 A | 6.8 A | 6.8 A | 6.8 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO | YES | YES | YES | YES | YES |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) |
| 端子形式 | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 40 | 30 | 40 | 40 | 30 | 40 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | - | - | 1 | 1 | - | 1 | 1 |
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