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SIHFBC30S: 产品描述Power MOSFET; 产品类别分立半导体晶体管; 文件大小329KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHFBC30S概述

Power MOSFET

SIHFBC30S规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Vishay(威世)
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	unknow
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	290 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	600 V
最大漏极电流 (Abs) (ID)	3.6 A
最大漏极电流 (ID)	3.6 A
最大漏源导通电阻	2.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	74 W
最大脉冲漏极电流 (IDM)	14 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

4.6

Single

FEATURES

600

2.2

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC30S, SiHFBC30S)

• Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)

• Available in Tape and Reel (IRFBC30S, SiHFBC30S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC30L, SiHFBC30L) is a available

for low-profile applications.

PAK (TO-263)

SiHFBC30STRL-GE3

IRFBC30STRLPbF

SiHFBC30STL-E3

PAK (TO-262)

SiHFBC30L-GE3

IRFBC30LPbF

SiHFBC30L-E3

PAK

(TO-262)

PAK (TO-263)

DESCRIPTION

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFBC30S-GE3

IRFBC30SPbF

SiHFBC30S-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

= 25 °C

Current

a, e

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

for 10 s

LIMIT

600

± 20

3.6

2.3

0.59

290

3.6

7.4

3.1

3.0

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 41 mH, R

= 25

,

= 3.6 A (see fig. 12).

c. I



3.6 A, dI/dt



60 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRFBC30, SiHFBC30 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91111

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBC30S相似产品对比

	SIHFBC30S	IRFBC30L	SIHFBC30L	SIHFBC30L-E3	SIHFBC30S-E3	SIHFBC30STL-E3	IRFBC30STRL	IRFBC30STRR
描述	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	MOSFET N-CH 600V 3.6A D2PAK	MOSFET N-CH 600V 3.6A D2PAK
是否Rohs认证	不符合	不符合	不符合	符合	符合	符合	不符合	不符合
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
零件包装代码	D2PAK	TO-262AA	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	4	3	3	3	4	4	4	4
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown	unknown
配置	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE
最小漏源击穿电压	600 V	600 V	600 V	600 V	600 V	600 V	600 V	600 V
最大漏极电流 (Abs) (ID)	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A
最大漏极电流 (ID)	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A	3.6 A
最大漏源导通电阻	2.2 Ω	2.2 Ω	2.2 Ω	2.2 Ω	2.2 Ω	2.2 Ω	2.2 Ω	2.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB	TO-262AA	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	3	3	3	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	NOT SPECIFIED	240	260	260	260	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	74 W	74 W	74 W	74 W	74 W	74 W	74 W	74 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	NO	YES	YES	YES	YES
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	30	40	40	40	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
是否无铅	含铅	-	含铅	不含铅	不含铅	不含铅	含铅	含铅
其他特性	AVALANCHE RATED	-	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	-	-
雪崩能效等级（Eas）	290 mJ	-	290 mJ	290 mJ	290 mJ	290 mJ	-	-
外壳连接	DRAIN	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN
JESD-609代码	e0	-	e0	e3	e3	e3	e0	e0
最大脉冲漏极电流 (IDM)	14 A	-	14 A	14 A	14 A	14 A	-	-
端子面层	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	TIN LEAD	TIN LEAD
晶体管应用	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING

SIHFBC30S

SIHFBC30S概述

SIHFBC30S规格参数

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