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SIHFBC20STL: 产品描述2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET; 产品类别分立半导体晶体管; 文件大小331KB，共11页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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SIHFBC20STL概述

2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET

2.2 A, 600 V, 4.4 ohm, N沟道, 硅, POWER, 场效应管

SIHFBC20STL规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	unknow
其他特性	AVALANCHE RATED
雪崩能效等级（Eas）	84 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	600 V
最大漏极电流 (Abs) (ID)	2.2 A
最大漏极电流 (ID)	2.2 A
最大漏源导通电阻	4.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	50 W
最大脉冲漏极电流 (IDM)	8 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

3.0

8.9

Single

600

4.4

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount (IRFBC20S, SiHFBC20S)

• Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)

• Available in Tape and Reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK is a surface mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (IRFBC20L, SiHFBC20L) is a available

for low-profile applications.

FEATURES

PAK

(TO-262)

PAK (TO-263)

DESCRIPTION

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFBC20S-GE3

IRFBC20SPbF

SiHFBC20S-E3

PAK (TO-263)

SiHFBC20STRL-GE3

IRFBC20STRLPbF

SiHFBC20STL-E3

PAK (TO-262)

SiHFBC20L-GE3

IRFBC20LPbF

SiHFBC20L-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Avalanche Current

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

= 25 °C

Current

a, e

at 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

LIMIT

600

± 20

2.2

1.4

8.0

0.40

2.2

5.0

3.1

3.0

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Operating Junction and Storage Temperature Range

, T

stg

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 31 mH, R

= 25

,

= 2.2 A (see fig. 12).

c. I



2.2 A, dI/dt



40 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

e. Uses IRFBC20, SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107

S11-1052-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBC20STL相似产品对比

	SIHFBC20STL	SIHFBC20L	SIHFBC20L-E3	SIHFBC20S	SIHFBC20S-E3	SIHFBC20STL-E3	IRFBC20STRR
描述	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET	MOSFET N-CH 600V 2.2A D2PAK
是否无铅	含铅	含铅	不含铅	含铅	不含铅	不含铅	含铅
是否Rohs认证	不符合	不符合	符合	不符合	符合	符合	不符合
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	4	3	3	4	4	4	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown
雪崩能效等级（Eas）	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ	84 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	600 V	600 V	600 V	600 V	600 V	600 V	600 V
最大漏极电流 (Abs) (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
最大漏极电流 (ID)	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A	2.2 A
最大漏源导通电阻	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω	4.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1	1
端子数量	2	3	3	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	240	260	240	260	260	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	50 W	50 W	50 W	50 W	50 W	50 W	50 W
最大脉冲漏极电流 (IDM)	8 A	8 A	8 A	8 A	8 A	8 A	8 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	YES	YES	YES	YES
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	30	40	30	40	40	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
零件包装代码	D2PAK	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	-
其他特性	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	-
外壳连接	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN
JEDEC-95代码	TO-263AB	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	-
JESD-609代码	e0	e0	e3	e0	e3	e3	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	-
Base Number Matches	1	1	1	1	1	1	-

SIHFBC20STL

SIHFBC20STL概述

SIHFBC20STL规格参数

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