IRFB16N50K, SiHFB16N50K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
89
27
43
Single
D
FEATURES
500
0.285
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R
DS(on)
• Lead (Pb)-free Available
TO-220
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
G
D
S
N-Channel
MOSFET
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB16N50KPbF
SiHFB16N50K-E3
IRFB16N50K
SiHFB16N50K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
500
± 30
17
11
68
2.3
310
17
28
280
11
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 2.2 mH, R
G
= 25
Ω,
I
AS
= 17 A.
c. I
SD
≤
17 A, dI/dt
≤
500 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
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1
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
0.44
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 10 A
b
V
DS
= 50 V, I
D
= 10 A
500
-
3.0
-
-
-
-
5.7
-
0.58
-
-
-
-
0.285
-
-
-
5.0
± 100
50
250
0.350
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
I
D
= 17 A, V
DS
= 400 V
b
-
-
-
-
-
-
-
-
-
-
2210
240
26
2620
63
120
60
18
28
20
77
38
30
-
-
-
-
-
-
89
27
43
-
-
-
-
ns
nC
pF
V
DD
= 250 V, I
D
= 17 A,
R
G
= 8.8
Ω,
V
GS
= 10 V
b
-
-
-
-
-
-
-
-
-
-
-
490
5710
17
A
68
1.5
730
8560
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
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Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
TOP
100
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current
(Α
)
T J = 150°C
10
BOTTOM
10
1
5.5V
T J = 25°C
V
DS = 100V
60µs PULSE
WIDTH
1.0
4
5
6
7
8
9 10 11 12 13 14 15 16
0.1
0.1
1
60µs PULSE
WIDTH
Tj = 25°C
10
100
V
DS, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
TOP
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
5.5V
3.0
ID, Drain-to-Source Current (A)
2.5
ID = 17A
V
GS = 10V
10
BOTTOM
2.0
5.5V
1.5
1
1.0
0.5
60µs PULSE
WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V
DS, Drain-to-Source
Voltage
(V)
0.0
-60 -40 -20
0
20
40
60
80
100 120 140 160
T J , Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
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3
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
100000
10000
Coss = C ds + C gd
ISD, Reverse Drain Current (A)
V
GS = 0V,
f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
100.00
C, Capacitance(pF)
Ciss
1000
T J = 150°C
10.00
Coss
100
T J = 25°C
1.00
Crss
10
V
GS = 0V
1
1
10
100
1000
0.10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS, Drain-to-Source
Voltage
(V)
V
SD, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12.0
ID= 17A
V
GS, Gate-to-Source
Voltage
(V)
1000
V
DS= 400V
V
DS= 250V
V
DS= 100V
OPERATION IN THIS AREA
LIMITED BY R DS(on)
8.0
ID, Drain-to-Source Current (A)
10.0
100
6.0
10
100µsec
1msec
4.0
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
10msec
1000
10000
2.0
0.0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
IRFB16N50K, SiHFB16N50K
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
+
-
V
DD
10
V
20
15
ID, Drain Current (A)
R
G
10
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
5
V
DS
90
%
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
L
V
DS
Driver
RG
20
V
D.U.T.
IAS
tp
+
-
V
DD
A
I
AS
0.01
Ω
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91096
S09-0015-Rev. A, 19-Jan-09
Fig. 12b - Unclamped Inductive Waveforms
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