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SIHF9Z34STL

产品描述18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
产品类别分立半导体    晶体管   
文件大小209KB,共9页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

SIHF9Z34STL概述

18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB

18 A, 60 V, 0.14 ohm, P沟道, 硅, POWER, 场效应管, TO-263AB

SIHF9Z34STL规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码D2PAK
包装说明SMALL OUTLINE, R-PSSO-G2
针数4
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性AVALANCHE RATED
雪崩能效等级(Eas)370 mJ
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压60 V
最大漏极电流 (Abs) (ID)18 A
最大漏极电流 (ID)18 A
最大漏源导通电阻0.14 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
JESD-609代码e0
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
最高工作温度175 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
极性/信道类型P-CHANNEL
最大功率耗散 (Abs)3.7 W
最大脉冲漏极电流 (IDM)72 A
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间30
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
IRF9Z34S, SiHF9Z34S
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
34
9.9
16
Single
-60
0.14
FEATURES
Advanced process technology
Surface mount (IRF9Z34S, SiHF9Z34S)
175 °C operating temperature
Available
Fast switching
P-channel
Available
Fully avalanche rated
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
S
D
2
PAK (TO-263)
G
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
G D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF9Z34S-GE3
IRF9Z34SPbF
D
2
PAK (TO-263)
SiHF9Z34STRL-GE3
a
IRF9Z34STRLPbF
a
D
2
PAK (TO-263)
SiHF9Z34STRR-GE3
a
IRF9Z34STRRPbF
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 1.3 mH, R
g
= 25
,
I
AS
= - 18 A (see fig. 12).
c. I
SD
- 18 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z34, SiHF9Z34 data and test conditions.
S16-0754-Rev. E, 02-May-16
Document Number: 91093
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T
C
= 25 °C
T
A
= 25 °C
b, e
SYMBOL
V
DS
V
GS
V
GS
at -10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
-60
± 20
-18
-13
-72
0.59
370
-18
8.8
88
3.7
-4.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C

SIHF9Z34STL相似产品对比

SIHF9Z34STL SIHF9Z34S SIHF9Z34S-E3 SIHF9Z34STR-E3 SIHF9Z34STR SIHF9Z34STL-E3 SIHF9Z34L-E3 SIHF9Z34L IRF9Z34LPBF IRF9Z34L
描述 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
是否Rohs认证 不符合 不符合 符合 符合 不符合 符合 符合 不符合 符合 不符合
零件包装代码 D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK TO-262AA TO-262AA TO-262AA TO-262AA
包装说明 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 4 4 4 4 4 4 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow compli unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED HIGH RELIABILITY HIGH RELIABILITY
雪崩能效等级(Eas) 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ 370 mJ
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (Abs) (ID) 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A
最大漏极电流 (ID) 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A 18 A
最大漏源导通电阻 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω 0.14 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-262AA TO-262AA TO-262AA TO-262AA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) 240 240 260 260 240 260 260 240 NOT SPECIFIED NOT SPECIFIED
极性/信道类型 P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
最大功率耗散 (Abs) 3.7 W 3.7 W 3.7 W 3.7 W 3.7 W 3.7 W 3.7 W 3.7 W 88 W 88 W
最大脉冲漏极电流 (IDM) 72 A 72 A 72 A 72 A 72 A 72 A 72 A 72 A 72 A 72 A
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES NO NO NO NO
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30 40 40 30 40 40 30 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
是否无铅 含铅 含铅 不含铅 不含铅 含铅 不含铅 不含铅 含铅 不含铅 -
JESD-609代码 e0 e0 e3 e3 e0 e3 e3 e0 e3 -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) -
Base Number Matches 1 1 1 1 1 1 1 1 - -
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