IRF9620, SiHF9620
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
22
12
10
Single
S
FEATURES
- 200
1.5
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
G
G
D
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dt
b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
40
- 5.0
- 55 to + 150
300
c
10
1.1
W/°C
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I
SD
- 3.5 A, dI/dt
95 A/μs, V
DD
V
DS
, T
J
150 °C.
c. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
3.1
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 μA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 μA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.5 A
b
V
DS
= - 50 V, I
D
= - 1.5 A
b
- 200
-
- 2.0
-
-
-
-
1.0
-
- 0.22
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
1.5
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
350
100
30
-
-
-
15
25
20
15
4.5
7.5
-
-
-
22
12
10
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 4.0 A, V
DS
= - 160 V,
see fig. 11 and 18
b
-
-
-
V
DD
= - 100 V, I
D
= - 1.5 A,
R
g
= 50
,
R
D
= 67, see fig. 17
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
300
1.9
- 3.5
A
- 14
- 7.0
450
2.9
V
ns
μC
G
S
T
J
= 25 °C, I
S
= - 3.5 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 3.5 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
www.vishay.com
2
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
-5
V
GS
= - 10, - 9, - 8, - 7 V
-5
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
I
D
, Drain Current (A)
-3
-6V
I
D
, Drain Current (A)
-4
-4
-3
-6V
-2
-5V
-1
80 µs Pulse Test
-4V
0
0
- 10
- 20
- 30
- 40
- 50
-2
-5V
-1
-4V
0
0
-1
-2
-3
-4
-5
91082_01
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
91082_03
V
DS
, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
-5
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
10
2
I
D
, Drain Current (A)
-4
Negative I
D
, Drain Current (A)
5
Operation in this area limited
by R
DS(on)
2
10
100
µs
5
-3
-2
2
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
1
5
-1
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on) max.
0
91082_02
2
0
-2
-4
0.1
-6
-8
- 10
91082_04
10
2
5
10
2
2
5
10
3
V
GS
, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Negative V
DS
, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
Z
thJC
(t)/R
thJC
, Normalized Effective Transien
Thermal Impedence (Per Unit)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
-5
2
5
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse (Transient
Thermal Impedence)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 3.12 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
5
10
-4
2
5
10
-3
2
10
-2
2
5
0.1
2
5
1.0
2
5
10
91082_05
t
1
, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
4.0
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
I
D
= - 1.0 A
V
GS
= - 10 V
g
fs
,Transconductance (S)
3.2
T
J
= - 55
°
C
2.4
T
J
= 25
°
C
T
J
= 125
°
C
2.0
1.5
1.6
1.0
0.8
0.5
0.0
0
91082_06
-1
-2
-3
-4
-5
91082_09
0.0
- 40
0
40
80
120
160
I
D,
Drain Current (A)
T
J
, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
- 20
500
C
iss
I
DR
, Reverse Drain Current (A)
- 10
400
-5
-2
- 1.0
- 0.5
- 0.2
- 0.1
- 2.0
0
- 3.2
- 4.4
- 5.6
- 6.8
- 8.0
91082_10
C, Capacitance (pF)
300
C
oss
200
C
rss
100
T
J
= 150
°
C
T
J
= 25
°
C
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C ,C
C
oss
= C
ds
+
gs gd
C
gs
+ C
gd
≈
C
gs
+ C
gd
0
- 10
- 20
- 30
- 40
- 50
91082_07
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
BV
DSS
, Drain-to-Source Breakdown
Voltage (Normalized)
1.25
Negative V
GS
, Gate-to-Source Voltage (V)
20
I
D
= - 3.5 A
V
DS
= - 100 V
V
DS
= - 60 V
V
DS
= - 40 V
1.15
16
1.05
12
0.95
8
0.85
4
For test circuit
see figure 18
0.75
- 40
91082_08
0
40
80
120
0
0
4
8
12
160
16
20
T
J
, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
91082_11
Q
G
, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
4
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
L
5
R
DS(on)
measured with current
pulse of 2.0 µs duration. Initial
T
J
=
25 °C. (Heating effect of
2.0 µs pulse is minimal.)
V
GS
= - 10 V
Vary t
p
to obtain
required I
L
D.U.T.
V
DS
V
DD
E
C
0.05
Ω
-
+
R
DS(on)
, Drain-to-Source
On Resistance (Ω)
4
V
GS
= - 10 V
t
p
3
I
L
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
2
V
GS
= - 20 V
1
Fig. 15 - Clamped Inductive Test Circuit
V
DD
0
0
91082_12
-4
-8
- 12
- 16
- 20
I
L
t
p
E
C
I
D
, Drain Current (A)
V
DS
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 16 - Clamped Inductive Waveforms
3.5
Negative I
D
, Drain Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
- 10 V
R
G
V
GS
R
D
V
DS
D.U.T.
+
-
V
DD
0.0
25
91082_13
50
75
100
125
150
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
T
C
, Case Temperature (°C)
Fig. 17a - Switching Time Test Circuit
Fig. 13 - Maximum Drain Current vs. Case Temperature
40
P
D
, Power Dissipation (W)
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
90 %
V
DS
t
d(on)
V
GS
10 %
t
r
t
d(off)
t
f
91082_14
T
C
, Case Temperature (°C)
Fig. 17b - Switching Time Waveforms
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5
Fig. 14 - Power vs. Temperature Derating Curve
Document Number: 91082
S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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