IRF9610, SiHF9610
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
11
7.0
4.0
Single
S
FEATURES
- 200
3.0
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Maximum Power Dissipation
Inductive Current, Clamp
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
P
D
I
LM
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25
T
C
= 100
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 200
± 20
- 1.8
- 1.0
- 7.0
0.16
20
- 7.0
- 5.0
- 55 to + 150
300
d
10
1.1
W/°C
W
A
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. I
SD
≤
- 1.8 A, dI/dt
≤
70 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
www.vishay.com
1
IRF9610, SiHF9610
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
6.4
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= -0.90 A
b
V
DS
= - 50 V, I
D
= - 0.90 A
b
- 200
-
- 2.0
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 10
-
-
-
-
170
50
15
-
-
-
8.0
15
10
8.0
4.5
7.5
-
-
-
11
7.0
4.0
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 3.5 A, V
DS
= - 160 V,
see fig. 11 and 18
b
-
-
-
V
DD
= - 100 V, I
D
= - 0.90 A,
R
G
= 50
Ω,
R
D
= 110
Ω,
see fig. 17
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
240
1.7
- 1.8
A
- 7.0
- 5.8
360
2.6
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 1.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 1.8 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
IRF9610, SiHF9610
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
- 2.40
V
GS
= - 10, - 9, -
8,
- 7
V
- 2.40
-7
V
V
GS
= - 10, - 9, -
8 V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
- 1.92
- 1.92
- 1.44
-6
V
- 1.44
-6
V
- 0.96
-5
V
80 µs
Pulse Test
0.00
0
- 10
- 20
- 30
- 40
- 50
-4
V
- 0.96
-5
V
80 µs
Pulse Test
0.00
0
-2
-4
-6
-
8
- 10
-4
V
- 0.48
- 0.48
91080_01
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
91080_03
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
10
2
- 1.92
I
D
, Drain Current (A)
T
J
= 25
°
C
T
J
= 125
°
C
Negative
I
D
, Drain Current (A)
T
J
= - 55
°
C
5
Operation in this area limited
by
R
DS(on)
2
10
5
- 1.44
100
µs
- 0.96
2
1
5
2
1
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
- 0.48
80 µs
Pulse Test
V
DS
> I
D(on)
x R
DS(on) max.
0
91080_02
10
ms
0.00
-2
-4
0.1
-6
-
8
- 10
91080_04
10
2
5
10
2
2
5
10
3
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 2 - Typical Transfer Characteristics
Negative V
DS
, Drain-to-Source
Voltage
(V)
Fig. 4 - Maximum Safe Operating Area
Z
thJC
(t)/R
thJC
,
Normalized
Effective Transient
Thermal Impedence (Per Unit)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse (Transient
Thermal Impedence)
2
5
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 6.4 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
5
0.01
10
-5
10
-4
2
5
10
-3
2
10
-2
2
5
0.1
2
5
1.0
2
5
10
91080_05
t
1
, Square
Wave
Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
www.vishay.com
3
IRF9610, SiHF9610
Vishay Siliconix
2.0
80 µs
Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
I
D
= - 0.6 A
V
GS
= - 10
V
g
fs
,Transconductance (S)
1.6
T
J
= - 55
°
C
T
J
= 25
°
C
T
J
= 125
°
C
2.0
1.2
1.5
0.8
1.0
0.4
0.5
0.0
0
91080_06
- 0.48
- 0.96
- 1.44
- 1.92
- 2.40
91080_09
0.0
- 40
0
40
80
120
160
I
D,
Drain Current (A)
T
J
, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 9 - Normalized On-Resistance vs. Temperature
- 10.0
- 5.0
500
I
D
, Drain Current (A)
400
- 2.0
- 1.0
T
J
= 150
°
C
- 0.5
T
J
= 25
°
C
C, Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C ,C
C
oss
= C
ds
+
gs gd
C
gs
+ C
gd
≈
C
gs
+ C
gd
C
iss
300
200
C
oss
100
C
rss
0
- 0.2
- 0.1
- 2.0
91080_07
- 3.2
- 4.4
- 5.6
- 6.8
-
8.0
91080_10
0
- 10
- 20
- 30
- 40
- 50
V
SD
, Source-to-Drain
Voltage
(V)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Negative V
GS
, Gate-to-Source
Voltage
(V)
BV
DSS
, Drain-to-Source Breakdown
Voltage
(Normalized)
1.25
20
I
D
= - 1.8 A
V
DS
= - 100
V
V
DS
= - 60
V
V
DS
= - 40
V
1.15
16
1.05
12
0.95
8
0.85
4
For test circuit
see figure 18
0.75
- 40
91080_08
0
0
2
4
0
40
80
120
160
91080_11
6
8
T
J
, Junction Temperature (°C)
Fig. 8 - Breakdown Voltage vs. Temperature
Q
G
, Total Gate Charge (nC)
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
IRF9610, SiHF9610
Vishay Siliconix
7
6
Negative
I
D
, Drain Current (A)
R
DS(on)
, Drain-to-Source
On Resistance (Ω)
R
DS(on)
measured
with
current pulse of
2.0
µs
duration. Initial T
J
=
25 °C.
(Heating effect of
2.0
µs
pulse is minimal.)
V
GS
= - 10
V
2.0
1.6
5
4
3
1.2
V
GS
= - 20
V
2
1
0
0
-1
-2
-3
-4
-5
-6
-7
0.8
0.4
0.0
25
91080_13
50
75
100
125
150
91080_12
I
D
, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
T
C
, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
20
P
D
, Power Dissipation (W)
15
10
5
0
0
91080_14
20
40
60
80
100
120
140
T
C
, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary
t
p
to obtain
required I
L
D.U.T.
V
DD
V
DS
V
DD
E
C
0.05
Ω
I
L
V
DD
= 0.5
V
DS
E
C
= 0.75
V
DS
-
+
V
GS
= - 10
V
t
p
I
L
t
p
E
C
Fig. 16 - Clamped Inductive Waveforms
V
DS
Fig. 15 - Clamped Inductive Test Circult
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
www.vishay.com
5
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