IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
38
6.8
21
Single
S
FEATURES
-100
0.30
•
•
•
•
•
•
•
•
Dynamic dV/dt rating
Available
Repetitive avalanche rated
P-channel
Available
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
G
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
D
S
D
P-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF9530PbF
SiHF9530-E3
IRF9530
SiHF9530
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
T
C
= 25 °C
c
SYMBOL
V
DS
V
GS
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
-100
± 20
- 12
-8.2
-48
0.59
400
-12
8.8
88
- 5.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 4.2 mH, R
g
= 25
,
I
AS
= -12 A (see fig. 12).
c. I
SD
-12 A, dI/dt
140 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
S16-0754-Rev. C, 02-May-16
Document Number: 91076
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p -n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
R
g
V
GS
= 0 V, I
D
= -250 μA
Reference to 25 °C, I
D
= -1 mA
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= ± 20 V
V
DS
= -100 V, V
GS
= 0 V
V
DS
= -80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= -10 V
I
D
= -7.2 A
b
V
DS
= -50 V, I
D
= -7.2 A
b
-100
-
-2.0
-
-
-
-
3.7
-
-0.10
-
-
-
-
-
-
-
-
-4.0
± 100
-100
-500
0.30
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
860
340
93
-
-
-
12
52
31
39
4.5
7.5
-
-
-
-
38
6.8
21
-
-
-
-
-
nH
-
3.3
ns
nC
pF
V
GS
= -10 V
I
D
= -12 A, V
DS
= -80 V,
see fig. 6 and 13
b
-
-
-
V
DD
= -50 V, I
D
= -12 A,
R
g
= 12
,R
D
= 3.9, see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
f = 1 MHz, open drain
0.4
-
-
-
-
-
-
-
-
120
0.46
-12
A
-48
-6.3
240
0.92
V
ns
μC
G
S
T
J
= 25 °C, I
S
= -12 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= -12 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0754-Rev. C, 02-May-16
Document Number: 91076
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
Vishay Siliconix
- I
D
, Drain Current (A)
10
1
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
I
D
= - 12 A
V
GS
= - 10 V
10
0
10
-1
91076_01
20 µs Pulse Width
T
C
=
25 °C
10
0
10
1
20 40 60 80 100 120 140 160 180
- V
DS
, Drain-to-Source Voltage (V)
91076_04
T
J,
Junction Temperature (°C)
Fig. 1 -Typical Output Characteristics, T
C
= 25 °C
Fig. 4 -Normalized On-Resistance vs. Temperature
Top
- I
D
, Drain Current (A)
Capacitance (pF)
10
1
Bottom
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 4.5 V
1800
1500
1200
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
900
600
300
C
oss
C
rss
10
0
10
-1
91076_02
20 µs Pulse Width
T
C
=
175 °C
10
0
10
1
91076_05
0
10
0
10
1
- V
DS,
Drain-to-Source Voltage (V)
- V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 5 -Typical Capacitance vs. Drain-to-Source Voltage
20
25
°
C
- V
GS
, Gate-to-Source Voltage (V)
I
D
= - 12 A
V
DS
= - 80 V
V
DS
= - 50 V
- I
D
, Drain Current (A)
16
10
1
175
°
C
12
V
DS
= - 20 V
8
4
For test circuit
see figure 13
10
0
4
91076_03
20 µs Pulse Width
V
DS
= -
50 V
5
6
7
8
9
10
0
0
91076_06
10
20
30
40
50
- V
GS,
Gate-to-Source Voltage (V)
Fig. 3 -Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 -Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. C, 02-May-16
Document Number: 91076
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
12
- I
SD
, Reverse Drain Current (A)
10
10
1
175
°
C
- I
D
, Drain Current (A)
8
6
4
2
25
°
C
10
0
10
-1
1.0
91076_07
V
GS
= 0 V
0
2.0
3.0
4.0
5.0
91076_09
25
50
75
100
125
150
175
- V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 -Typical Source-Drain Diode Forward Voltage
Fig. 9 -Maximum Drain Current vs. Case Temperature
R
D
10
3
5
2
Operation in this area limited
by R
DS(on)
R
G
V
DS
V
GS
D.U.T.
+
-
V
DD
- 10 V
- I
D
, Drain Current (A)
10
2
5
2
10
µs
100
µs
1
ms
10
ms
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10
5
2
1
5
2
Fig. 10a - Switching Time Test Circuit
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
0.1
2
5
0.1
t
d(on)
5
t
r
t
d(off)
t
f
1
2
5
10
2
10
2
2
5
10
3
V
GS
10 %
91076_08
- V
DS
, Drain-to-Source Voltage (V)
Fig. 8 -Maximum Safe Operating Area
90 %
V
DS
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
10
-2
10
-5
91076_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. C, 02-May-16
Document Number: 91076
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530, SiHF9530
www.vishay.com
Vishay Siliconix
I
AS
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
V
DS
-
+ V
DD
V
DD
t
p
- 10 V
t
p
0.01
Ω
A
V
DS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
1200
E
AS
, Single Pulse Energy (mJ)
1000
800
600
400
200
0
V
DD
= - 25 V
25
50
75
100
I
D
- 4.9 A
- 8.5 A
Bottom - 12 A
Top
125
150
175
91076_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12 V
- 10 V
Q
GS
Q
G
0.2 µF
0.3 µF
V
G
V
GS
- 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
S16-0754-Rev. C, 02-May-16
Document Number: 91076
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
+
D.U.T.
-
Q
GD
V
DS
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