IRF820A, SiHF820A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
4.3
8.5
Single
D
FEATURES
500
3.0
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and current
• Effective C
oss
Specified
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
G
• High Speed Power Switching
G
D
S
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half bridge
• Full bridge
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF820APbF
SiHF820A-E3
IRF820A
SiHF820A
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
500
± 30
2.5
1.6
10
0.40
140
2.5
5.0
50
3.4
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 45 mH, R
g
= 25
Ω,
I
AS
= 2.5 A (see fig. 12).
c. I
SD
≤
2.5 A, dI/dt
≤
270 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
2.5
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 1.5 A
b
V
DS
= 50 V, I
D
= 1.5 A
b
500
-
2.0
-
-
-
-
1.4
-
0.60
-
-
-
-
-
-
-
-
4.5
± 100
25
250
3.0
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
GS
= 0 V; V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V; V
DS
= 400 V, f = 1.0 MHz
V
GS
= 0 V; V
DS
= 0 V to 400 V
c
-
-
-
340
53
2.7
490
15
28
-
-
-
pF
-
V
GS
= 10 V
I
D
= 2.5 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 250 V, I
D
= 2.5 A,
R
g
= 21
Ω,
R
D
= 97
Ω,
see fig. 10
b
-
-
-
-
-
-
8.1
12
16
13
17
4.3
8.5
-
-
-
-
ns
nC
-
-
-
-
-
-
-
-
330
760
2.5
A
10
1.6
500
1140
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 2.5 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 2.5 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
www.vishay.com
2
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
1
5.5 V
5.0 V
Bottom 4.5 V
10
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
0.1
4.5 V
10
-2
0.1
91057_01
20 µs Pulse Width
T
J
=
25 °C
1
10
10
2
10
-2
4.0
91057_03
20 µs Pulse Width
V
DS
=
50 V
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage (V)
V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
3.0
2.5
2.0
1.5
1.0
0.5
I
D
, Drain-to-Source Current (A)
1
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
I
D
= 2.5 A
V
GS
= 10 V
0.1
1
91057_02
20 µs Pulse Width
T
J
=
150 °C
10
10
2
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS,
Drain-to-Source Voltage (V)
91057_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
10
4
10
3
I
SD
, Reverse Drain Current (A)
C, Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
T
J
= 150
°
C
10
2
C
oss
10
C
rss
1
1
10
10
2
10
3
1
T
J
= 25
°
C
0.1
0.4
91057_07
V
GS
= 0 V
0.6
0.8
1.0
1.2
91057_05
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 2.5 A
V
DS
= 400 V
10
2
Operation in this area limited
by R
DS(on)
15
V
DS
= 250 V
V
DS
= 100 V
I
D
, Drain Current (A)
10
10
µs
100
µs
10
1
1
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
10
10
2
10
ms
10
3
10
4
5
For test circuit
see figure 13
0
0
91057_06
0.1
4
8
12
16
91057_08
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF820A, SiHF820A
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
+
-
V
DD
10 V
3.0
2.5
R
G
I
D
, Drain Current (A)
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
V
DS
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
90 %
91054_09
T
C
, Case Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
Single Pulse
(Thermal Response)
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-3
10
-2
0.1
1
0.1
0.02
0.01
10
-2
10
-5
91057_11
10
-4
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91057
S11-0507-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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