IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
34
6.5
16
Single
250
0.435
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
I
2
PAK (TO-262)
TO-220
D
S
S
G
D
G
D
G
D
2
PAK (TO-263)
S
N-Channel
MOSFET
G D
S
ORDERING INFORMATION
Package
Lead (Pb)-free
SiHF634N-E3
IRF634N
SnPb
SiHF634N
Note
a. See device orientation.
SiHF634NS
SiHF634NSTL
a
SiHF634NSTR
a
-
SiHF634NS-E3
IRF634NS
SiHF634NSTL-E3
a
IRF634NSTRL
a
SiHF634NSTR-E3
a
IRF634NSTRR
a
SiHF634NL-E3
-
TO-220
IRF634NPbF
D
2
PAK (TO-263)
IRF634NSPbF
D
2
PAK (TO-263)
IRF634NSTRLPbF
a
D
2
PAK (TO-263)
IRF634NSTRRPbF
a
I
2
PAK (TO-262)
IRF634NLPbF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
1
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
d
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
250
± 20
8.0
5.6
32
0.59
110
4.8
8.8
88
3.8
7.3
- 55 to + 175
300
c
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 9.5 mH, R
G
= 25
Ω,
I
AS
= 4.8 A, V
GS
= 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D
2
PAK, when mounted 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Maximum Junction-to-Ambient
(PCB Mount)
b
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
a
SYMBOL
R
thJA
R
thJA
R
thJC
R
thCS
TYP.
-
-
-
0.50
MAX.
62
40
1.7
-
°C/W
UNIT
Notes
a. This is only applied to TO-220 package.
b. This is applied to D
2
PAK, when mounted 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 4.8 A
b
A
b
V
DS
= 50 V, I
D
= 4.8
250
-
2.0
-
-
-
-
5.4
-
0.33
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.435
-
V
V/°C
V
nA
µA
Ω
S
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
www.vishay.com
2
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
D
TYP.
620
84
23
-
-
-
8.4
16
28
15
4.5
7.5
MAX.
-
-
-
34
6.5
16
-
-
-
-
-
UNIT
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 4.8 A, V
DS
= 200 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
nC
V
DD
= 125 V, I
D
= 4.8 A,
R
G
= 1.3
Ω,
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
ns
-
G
nH
-
S
-
-
-
-
-
-
-
-
-
130
650
8.0
A
32
1.3
200
980
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 4.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4.8 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2
V
GS
Top
10
2
I
D
, Drain-to-Source Current (A)
15
V
10
V
8.0 V
7.0
V
10
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
I
D
, Drain-to-Source Current (A)
10
1
4.5
V
0.1
20
µs
Pulse
Width
T
C
=
25 °C
1
10
10
2
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
4.5
V
1
10
-2
0.1
91033_01
0.1
0.1
91033_02
20
µs
Pulse
Width
T
C
=
175 °C
1
10
10
2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
3
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
2
1200
1000
C
iss
I
D
, Drain-to-Source Current (A)
C, Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
T
J
= 175
°
C
800
C
oss
600
400
200
C
rss
1
T
J
= 25
°
C
20
µs
Pulse
Width
V
DS
=
50
V
5.0
6.0
7.0
8.0
9.0
0.1
4.0
91033_03
0
1
91033_05
10
10
2
10
3
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 7.9 A
V
GS
= 10
V
20
I
D
= 4.8 A
V
DS
= 200
V
V
DS
= 125
V
16
12
V
DS
= 50
V
8
4
For test circuit
see figure 13
0.0
- 60 - 40- 20 0 20 40 60
80
100 120 140 160 180
0
0
91033_06
10
20
30
40
91033_04
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
2
10.0
I
SD
, Reverse Drain Current (A)
10
T
J
= 175
°
C
I
D
, Drain Current (A)
V
GS
= 0
V
1.2
91033_09
8.0
6.0
1
T
J
= 25
°
C
4.0
2.0
0.1
0.2
91033_07
0.4
0.6
0.8
1.0
0.0
25
50
75
100
125
150
175
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
10
2
V
GS
Operation in this area limited
by
R
DS(on)
R
G
D.U.T.
+
-
V
DD
I
D
, Drain-to-Source Current (A)
10
V
10
100
µs
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
1
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
1
10
10
2
1
ms
V
DS
90
%
10
ms
10
3
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1
91033_08
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
5
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