a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 7 A.
c. 1.6 mm from case.
d. Limited by maximum junction temperature.
e. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
T
J
= 125 °C
E
AR
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 20
30
29
18
65
2
0.25
690
37
- 55 to + 150
37
18
300
c
W/°C
mJ
W
°C
V/ns
°C
A
V
UNIT
S11-2091 Rev. C, 31-Oct-11
1
Document Number: 91454
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHF30N60E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
3.4
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
T
J
= 25 °C, I
F
= I
S
= 15 A,
dI/dt = 100 A/μs, V
R
= 20 V
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 600 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 15 A
V
DS
= 8 V, I
D
= 3 A
600
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.64
-
-
-
-
0.104
5.4
2600
138
3
85
15
39
19
32
63
36
0.63
-
-
4.0
± 100
1
100
0.125
-
-
-
-
130
-
-
40
65
95
75
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1.0 MHz
pF
V
GS
= 10 V
I
D
= 15 A, V
DS
= 480 V
nC
V
DD
= 380 V, I
D
= 15 A,
V
GS
= 10 V, R
g
= 4.7
f = 1 MHz, open drain
ns
-
-
-
-
-
-
-
-
-
402
7
32
29
A
65
1.3
605
15
65
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 15 A, V
GS
= 0 V
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
S11-2091 Rev. C, 31-Oct-11
2
Document Number: 91454
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHF30N60E
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
70
60
I
D
- Drain Current (A)
50
40
30
20
10
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
5V
0
0
5
10
15
20
25
V
GS
, Gate-to-Source Voltage (V)
T
J
= 25 °C
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
Vishay Siliconix
80
60
I
D
, Drain Current (A)
T
J
= 25 °C
40
T
J
= 150 °C
20
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
50
3.0
I
D
= 15 A
V
GS
= 10 V
2.0
40
I
D
- Drain Current (A)
2.5
R
DS(on)
- On-Resistance
(Normalized)
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
30
1.5
20
1.0
10
T
J
= 150 °C
0.5
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
0.0
- 60 - 40 - 20
0
20
40
60
80 100 120 140 160
T
J
- Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-2091 Rev. C, 31-Oct-11
3
Document Number: 91454
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHF30N60E
www.vishay.com
Vishay Siliconix
1000
10 000
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
x C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
Operation in this area limited
by R
DS(on)
C - Capacitance (pF)
I
D
, Drain Current (A)
1000
100
100
10
100 µs
1 ms
1
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
10 ms
10
C
rss
1
0
100
200
300
400
500
600
V
DS
- Drain-to-Source Voltage (V)
1
10
100
1000
10 000
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
30.0
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
24
I
D
= 15 A
V
GS
-
Gate-to-Source
Voltage (V)
20
V
DS
= 120 V
16
V
DS
= 480 V
I
D
, Drain Current (A)
20.0
V
DS
= 300 V
25.0
12
15.0
8
10.0
4
5.0
0
0
25
50
75
100
125
150
Q
g
- Total
Gate
Charge (nC)
0
25
50
75
100
125
150
T
C
- Temperature (°C)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
Fig. 9 - Maximum Drain Current vs. Case Temperature
725
700
675
650
625
600
575
550
- 60 - 40 - 20
T
J
= 150
°C
10
1
T
J
= 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
DS
, Drain-to-Source Breakdown
Voltage (V)
100
I
S
-
Source
Current (A)
0
20
40
60
80 100 120 140 160
V
SD
-
Source-to-Drain
Voltage (V)
T
J
- Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Temperature vs. Drain-to-Source Voltage
S11-2091 Rev. C, 31-Oct-11
4
Document Number: 91454
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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