DOCUMENT : SIG3010H-000
REVISION
: A2
: 1 OF 4
SPECIFICATION FOR APPROVAL
Sealed Choke Coil SIG3010H type
Features
PAGE
Low profile：3.0mm
x
3.0mm
x
1.0mm
Low coil resistance with large currents.
High magnetic shield construction should actualize high resolution for EMC protection.
100% lead (Pb) free meet RoHS standard
Application
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..
Outline Dimensions
W
L
P
P
Code
L
W
T
P
Dimensions (mm)
3.0
±
0.1
3.0
±
0.1
1.0 Max
0.75
±
0.2
T
Note：This graph is only regard to dimensions spec. For outer appearance, please refer to actual product.
Recommend Land Pattern Dimensions
The customer shall determine the land dimensions shown above after confirming and safety.
B
A
A
C
2.7 ~ 2.9
1.2 ~ 1.4
3.0
Unit : mm
B
C
DOCUMENT : SIG3010H-000
REVISION
: A2
: 2 OF 4
SPECIFICATION FOR APPROVAL
Specifications
Part Number
SIG3010H-R47
SIG3010H-1R0
SIG3010H-1R5
SIG3010H-2R2
SIG3010H-3R3
SIG3010H-4R7
SIG3010H-6R8
SIG3010H-8R2
SIG3010H-100
SIG3010H-150
SIG3010H-220
SIG3010H-330
SIG3010H-470
PAGE
L0
Inductance
(
µ
H )
@ (0A)
0.47
1.0
1.5
2.2
3.3
4.7
6.8
8.2
10.0
15.0
22.0
33.0
47.0
R
dc
( m
Ω
)
Typical
38
68
65
90
110
167
250
311
366
672
708
1,360
2,170
Heat Rating Current DC
Amps. Idc ( A )
Typical
3.20
2.75
1.90
1.60
1.45
1.20
0.95
0.85
0.81
0.72
0.55
0.50
0.38
Saturation Current
DC Amps. Isat ( A )
Typical
3.70
3.00
1.80
1.60
1.25
1.00
0.85
0.80
0.75
0.58
0.45
0.38
0.30
Maximum
46
82
78
108
132
200
300
373
439
807
850
1,632
2,604
Maximum
2.88
2.48
1.71
1.44
1.31
1.08
0.86
0.77
0.73
0.64
0.50
0.45
0.34
Maximum
3.33
2.70
1.62
1.44
1.13
0.90
0.76
0.72
0.68
0.52
0.41
0.34
0.27
*
：
If you require another part number please contact with us.
**
：
Inductance Tolerance
±
20%
Note 1.
：
All test data is referenced to 25
℃
ambient.
Note 2.
：
Test Condition
:
1MHz, 1.0Vrms
Note 3.
：
Idc : DC current (A) that will cause an approximate
△
T of 40
℃
Note 4.
：
Isat : DC current (A) that will cause Lo to drop approximately 30%
Note 5.
：
Operating Temperature Range -55
℃
to + 125
℃
Note 6.
：
The part temperature (ambient + temp rise ) should not exceed 125
℃
under worse case operating
conditions. Circuit design , component placement, PWB trace size and thickness, airflow and other
cooling provision all affect the part temperature. Part temperature should be verified in the end
application.
Note 7.
：
The rated current as listed is either the saturation current or the heating current depending
on which value is lower.
DOCUMENT : SIG3010H-000
REVISION
: A2
: 3 OF 4
SPECIFICATION FOR APPROVAL
Current Characteristic
0.6
0.5
INDUCTANCE(µH)
SIG3010H-R47
PAGE
100
INDUCTANCE(uH)
1.2
1.0
SIG3010H-1R0
100
80
60
40
TEMP RISE(℃)
100
80
60
TEMP RISE(℃)
40
20
0
80
INDUCTANCE(µH)
TEMP RISE(℃)
0.4
0.3
0.2
0.1
0.0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
DC BIAS(Amps)
60
40
20
0
TEMP RISE(℃)
0.8
INDUCTANCE(µH)
0.6
0.4
0.2
0.0
0.0
0.4
TEMP RISE (
℃
)
20
0
0.8
1.2
1.6
2.0
DC BIAS(Amps)
2.4
2.8
3.2
2.0
INDUCTANCE(uH)
1.6
1.2
SIG3010H-1R5
100
80
TEMP RISE(℃)
60
2.5
INDUCTANCE(uH)
2.0
1.5
1.0
0.5
0.0
SIG3010H-2R2
100
80
60
INDUCTANCE(µH)
0.8
0.4
0.0
0.0
0.3
TEMP RISE (
℃
)
40
20
0
INDUCTANCE(µH)
TEMP RISE (℃)
40
20
0
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
DC BIAS(Amps)
DC BIAS(Amps)
4.2
INDUCTANCE(uH)
3.5
SIG3010H-3R3
80
60
6.0
INDUCTANCE(uH)
5.0
4.0
3.0
2.0
1.0
0.0
0.0
0.2
0.4
0.6
INDUCTANCE(µH)
TEMP RISE (
℃
)
SIG3010H-4R7
2.8
2.1
INDUCTANCE(µH)
40
TEMP RISE (
℃
)
1.4
0.7
0.0
0.0
0.2
20
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
TEMP RISE(℃)
0.8
1.0
1.2
1.4
1.6
1.8
DC BIAS(Amps)
DC BIAS(Amps)
TEMP RISE(℃)
DOCUMENT : SIG3010H-000
REVISION
: A2
: 4 OF 4
SPECIFICATION FOR APPROVAL
10.0
INDUCTANCE(uH)
8.0
6.0
INDUCTANCE(µH)
PAGE
SIG3010H-6R8
80
10.0
8.0
6.0
4.0
2.0
0.0
INDUCTANCE(µH)
TEMP RISE (℃)
SIG3010H-8R2
100
80
60
40
20
0
TEMP RISE(℃)
TEMP RISE(℃)
TEMP RISE(℃)
40
4.0
2.0
0.0
0.0
0.2
TEMP RISE (℃)
20
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TEMP RISE(℃)
60
INDUCTANCE(uH)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
DC BIAS(Amps)
DC BIAS(Amps)
12.0
INDUCTANCE(uH)
10.0
8.0
SIG3010H-100
100
80
TEMP RISE(℃)
INDUCTANCE(µH)
60
18.0
15.0
12.0
9.0
6.0
3.0
0.0
0.0
0.1
0.2
0.3
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG3010H-150
90
75
60
45
30
15
0
6.0
4.0
2.0
0.0
0.0
0.1
0.2
INDUCTANCE(µH)
TEMP RISE (℃)
40
20
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
DC BIAS(Amps)
0.4 0.5 0.6 0.7
DC BIAS(Amps)
0.8
0.9
1.0
25.0
INDUCTANCE(uH)
20.0
15.0
SIG3010H-220
100
INDUCTANCE(µH)
80
TEMP RISE(℃)
60
42.0
35.0
28.0
21.0
14.0
7.0
0.0
0.00
0.10
0.20
0.30
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG3010H-330
60
50
40
30
20
10
0
INDUCTANCE(µH)
10.0
5.0
0.0
0.0
0.1
TEMP RISE (℃)
40
20
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.40
0.50
0.60
DC BIAS(Amps)
DC BIAS(Amps)
54.0
45.0
INDUCTANCE(µH)
36.0
27.0
18.0
9.0
0.0
INDUCTANCE(µH)
TEMP.RISE(℃)
SIG3010H-470
60
50
40
30
20
10
0
TEMP RISE(℃)
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
DC BIAS(Amps)
stm32/stm8
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