d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73199
S-60784-Rev. D, 08-May-06
www.vishay.com
1
SiE800DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 sec
Maximum Junction-to-Ambient
a, b
a
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 11 A
V
GS
= 4.5
V, I
D
= 9 A
V
DS
= 15 V, I
D
= 11 A
Min
30
Typ
Max
Unit
V
1.5
34.5
- 6.7
2.2
mV/°C
3.0
± 100
1
10
0.0072
0.0115
V
nA
µA
A
25
0.006
0.0095
50
1600
750
120
23
12
5.6
3
1.3
20
15
15
8
15
15
25
10
Ω
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 18.5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 18.5 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
pF
35
18
nC
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
1.95
30
25
25
15
25
25
40
15
50
60
1.2
70
65
ns
T
C
= 25 °C
I
S
= 10 A
I
F
= 10 A, di/dt = 100 A/µs, T
J
= 25 °C
0.8
45
41
21
24
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73199
S-60784-Rev. D, 08-May-06
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
60
V
GS
= 10 thru 5
V
50
I
D
– Drain C
u
rrent (A)
4
V
40
I
D
– Drain C
u
rrent (A)
20
25 °C, unless noted
25
15
30
10
T
C
= 125 °C
5
25 °C
20
10
3
V
0
0.0
0.4
0.8
1.2
1.6
2.0
- 55 °C
0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Output Characteristics
0.014
2500
Transfer Characteristics
r
DS(on)
– On-Resistance (mΩ)
0.012
C – Capacitance (pF)
V
GS
= 4.5
V
0.010
2000
C
oss
1500
0.008
V
GS
= 10
V
0.006
1000
C
iss
500
C
rss
0.004
0
10
20
30
40
50
60
0
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 18.5 A
8
V
DS
= 15
V
6
V
DS
= 24
V
4
r
DS(on)
– On-Resistance
(
N
ormalized)
1.8
I
D
= 10.8 A
Capacitance
1.6
1.4
V
GS
= 10
V
1.2
V
GS
= 4.5
V
1.0
2
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73199
S-60784-Rev. D, 08-May-06
www.vishay.com
3
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
60
r
DS(on)
– Drain-to-So
u
rce On-Resistance (Ω)
0.020
I
D
= 10.8 A
0.016
I
S
– So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
0.012
T
A
= 125 °C
0.008
T
A
= 25 °C
0.004
0
2
4
6
8
10
T
J
= 25 °C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain
Voltage
(V)
V
GS
– Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
3.0
50
On-Resistance vs. Gate-to-Source Voltage
2.6
I
D
= 250
µA
Po
w
er (
W
)
V
GS(th)
(
V
)
2.2
40
30
1.8
20
1.4
10
1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
1000
T
J
– Temperature (°C)
Threshold Voltage
100
*Limited
by
r
DS(on)
Single Pulse Power, Junction-to-Ambient
1 ms
10
I
D
– Drain C
u
rrent (A)
10 ms
100 ms
1
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
dc
0.01
0.1
*V
GS
1
10
100
V
DS
– Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73199
S-60784-Rev. D, 08-May-06
SiE800DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
120
120
100
I
D
– Drain C
u
rrent (A)
Po
w
er Dissipation (
W
)
Package Limited
20
100
80
80
60
60
40
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
C
– Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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