SiDB766760
Vishay Siliconix
Current-Sense MOSFET Evaluation Board
FEATURES
D
Facilitates Evaluation of Vishay Siliconix Current Sensing
Power MOSFETs Available in Three Different Packages
D
Jumper Isolation to Select The Device Under Test
D
Simple Two Resistor External Circuit for Each Variety
ORDERING INFORMATION
D
SiDB766760
FIGURE 1.
EVB Assembly
DESCRIPTION
This evaluation board (EVB) is loaded with the following
Vishay Siliconix current sensing MOSFETs: SUM60N08-07C,
(5-pin D
2
PAK), Si4730EY (single SO-8), and Si6862DQ (dual
TSSOP–8). Figure 1 shows the PC board assembly. A simple
electrical set-up allows users to evaluate the effect of these
parameters and operating condition variations:
a
.
b
.
c
.
d
.
R
SENSE
, current sense resistor
V
GS
, gate-source voltage
I
DS
, drain current
T
A
, ambient temperature
sensing capability of each package (Figures 2, 3, 4, and 5,
pages 4 and 5).
Using this EVB, users can devise various design experiments
to study device behavior patterns and characterize various
parameters for current sensing MOSFETs. Users can also
connect the current sense signal directly into the external
circuit to prototype the controller.
The electrical schematic diagram for the PC board is shown in
Appendix (A).
The bill of material (BOM) for the PC board is
given in
Appendix (B)
and the board layout details are given in
Appendix (C).
A basic demo set-up consisting of four connection
configuration variations allows users to compare the current
The demonstration board layout is available in Gerber file format. Please contact your Vishay Siliconix sales representative or
distributor for a copy.
PIN CONFIGURATIONS
D
2
PAK-5
SO-8
SENSE
KELVIN
1 2 3 4 5
S
G
1
2
3
4
Top View
G
KELVIN
Document Number: 72431
23-Oct-03
D
S
SENSE
www.vishay.com
8
7
6
5
D
D
D
D
TSSOP-8
D
S
1
SENSE
1
G
1
2
3
4
Top View
D
8 D
7 S
2
6 SENSE
2
5 KELVIN
1
SiDB766760
Vishay Siliconix
TEST SET-UP
Evaluation of SUM60N08-07C in 5-pin D
2
PAK Package
Figure 2
(page 4) shows the electrical connection details.
Please observe the polarity of each connection.
1. Connect the main power supply, Vcc, between CON4 and
CON9, +ve to CON4 and –ve to CON9.
2. Connect the +ve of the electronic load to CON5 and –ve to
CON6.
3. Connect an external jumper between CON7 and CON8.
4. Connect the +ve of auxiliary power supply, V
GS
, to CON3,
pin 1 and –ve to CON3, pin 2.
5. Connect the +ve of voltmeter, V
S
, to the monitoring test
port, TP6, pin 1 and –ve to TP6, pin 2.
6. Remove all other jumper shunts (JP1, JP2, JP3, TP2, TP3,
and TP5).
Evaluation of Si4730EY MOSFET in SO-8 Package
Figure 3
(page 4) shows the electrical connection details.
Please observe the polarity of each connection.
1. Connect the main power supply, Vcc, between CON4 and
CON9, +ve to CON4 and –ve to CON9.
2. Connect the +ve of the electronic load to CON5 and –ve to
CON6.
3. Connect the +ve of auxiliary power supply, V
GS
, to CON2,
pin 1 and –ve to CON2, pin 2.
4. Connect the +ve of voltmeter, V
S
, to the monitoring test
port, TP4, pin 1 and –ve to TP4, pin 2.
5. Place a jumper shunt to short pins 1 and 2 on TP5.
Remove all other jumper shunts (JP1, JP2, JP3, TP2, TP3)
and the external jumper.
Evaluation of Si6862DQ Dual MOSFET in TSSOP-8
Package
Channel 1 MOSFET Terminated On Pins 1, 2, 3 and 4
Figure 4
(page 5) shows the electrical connection details.
Please observe the polarity of each connection.
1. Connect the main power supply, V
CC
, between CON4 and
CON9, +ve to CON4 and –ve to CON9.
2. Connect the +ve of the electronic load to CON5 and –ve to
CON6.
3.
4.
5.
6.
7.
8.
2
9. Remove the jumper shunts on TP3 and TP5 and the
external jumper.
Channel 2 MOSFET Terminated On Pins 5, 6, 7 and 8:
Figure 5
(page 5) shows the electrical connection details.
Please observe the polarity of each connection.
1. Connect the main power supply, Vcc, between CON4 and
CON9, +ve to CON4 and –ve to CON9.
2. Connect the +ve of the electronic load to CON5 and –ve to
CON6.
3. Connect the +ve of auxiliary power supply, V
GS
, to CON1,
pin 1 and –ve to CON1, pin 2.
4. Connect the +ve of voltmeter, V
S,
to the monitoring test
port, TP1, pin 1 and –ve to TP1, pin 2.
5. Place a jumper shunt to short pins 1 and 2 on TP3.
6. Place a jumper shunt on JP1, to short pins 2 and 3.
7. Place a jumper shunt on JP2, to short pins 2 and 3.
8. Place a jumper shunt on JP3, to short pins 2 and 3.
9. Remove the jumper shunts on TP2 and TP5 and the
external jumper.
CIRCUIT OPERATION
Select the appropriate set-up for the device under testing
(DUT) and complete the electrical connection.
1. Connect the main power supply, auxiliary power supply
and electronic load to 115-V
AC
mains input.
2. Adjust the output voltage of main supply to provide
Vcc = 12 V
DC
.
3. Select the constant current mode for the electronic load
and adjust the load current to 0 A.
4. Turn on the load. Adjust the output of auxiliary power
supply to provide V
GS
= 10 V
DC
or 5.0 V
DC
as the case
may be.
5. Adjust the load current, which is drain current, I
D
, in steps
of 1 A up to the device rating or 15 A maximum and
measure the current sense signal voltage, V
S
.
6. Record the MOSFET current, I
D,
and sense voltage, V
S.
See
Table 1
on page 3.
7. Compute the current sense ratio, r, from V
S
and I
DS
:
I
DS
= r x (V
S
/ R
SENSE
)
Where
I
DS
= Drain-source current
r = Current-sensing ratio
V
S
= Current sense voltage
Connect the +ve of auxiliary power supply, V
GS
, to CON1,
pin 1 and –ve to CON1, pin 2.
Connect the +ve of voltmeter, V
S,
to the monitoring test
port, TP1, pin1 and –ve to TP1, pin 2.
Place a jumper shunt to short pins 1 and 2 on TP2.
Place a jumper shunt on JP1, to short pins 1 and 2.
Place a jumper shunt on JP2, to short pins 1 and 2.
Place a jumper shunt on JP3, to short pins 1 and 2.
SUMMARY
The current sensing MOSFET EVB facilitates basic testing as
well as parametric study of current sensing MOSFETs. The
current sense signal can easily be sent to other circuits being
tested to study control behavior.
Document Number: 72431
23-Oct-03
www.vishay.com
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
