Si9936BDY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.035 @ V
GS
= 10 V
0.052 @ V
GS
= 4.5 V
I
D
(A)
6.0
4.9
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
Ordering Information: Si9936BDY—E3
Si9936BDY-T1—E3 (with Tape and Reel)
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
6.0
4.8
40
1.7
2.0
1.3
Steady State
Unit
V
4.5
3.6
A
0.9
1.1
0.7
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
53
92
30
Maximum
62.5
110
40
Unit
_C/W
C/W
1
Si9936BDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 4.9 A
V
DS
= 15 V, I
D
= 6 A
I
S
= 1.7 A, V
GS
= 0 V
40
0.028
0.041
12
0.8
1.2
0.035
0.052
1.0
3.0
"100
1
5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6 A
8.6
1.8
1.5
2.8
10
15
25
10
20
15
25
40
15
40
ns
W
13
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
35
30
I
D
−
Drain Current (A)
25
20
15
10
5
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
3V
4V
I
D
−
Drain Current (A)
V
GS
= 10 thru 6 V
5V
40
35
30
25
20
15
10
5
0
0
1
Transfer Characteristics
T
C
=
−55_C
25_C
125_C
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
2
Si9936BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
r
DS(on)
−
On-Resistance (
W
)
800
700
C
−
Capacitance (pF)
0.08
600
500
400
300
200
100
0.00
0
5
10
15
20
25
30
35
40
0
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
Vishay Siliconix
Capacitance
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 6 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 6 A
1.4
6
r
DS(on)
−
On-Resistance (
W)
(Normalized)
4
6
8
10
1.2
4
1.0
2
0.8
0
0
2
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.08
0.06
I
D
= 6 A
0.04
T
J
= 25_C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si9936BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
10
Power (W)
30
50
Single Pulse Power
40
20
−25
0
25
50
75
100
125
150
0
10
−3
10
−2
10
−1
1
10
100
600
T
J
−
Temperature (_C)
Time (sec)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
10
I
D
−
Drain Current (A)
P(t) = 0.0001
P(t) = 0.001
1
I
D(on)
Limited
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
dc
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 92_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
Si9936BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
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