RN2307~RN2309
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2307,RN2308,RN2309
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN1307~RN1309
Unit: mm
Equivalent Circuit
Bias Resistor Values
Type No.
RN2307
RN2308
RN2309
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Maximum Ratings
(Ta
=
25°C)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2307
Emitter-base voltage
RN2308
RN2309
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
1
2001-06-07
RN2307~RN2309
Electrical Characteristics
(Ta = 25°C)
°
Characteristic
Collector cut-off current
RN2307
Emitter cut-off current
RN2308
RN2309
RN2307
DC current gain
RN2308
RN2309
Collector-emitter saturation voltage
RN2307
Input voltage (ON)
RN2308
RN2309
RN2307
Input voltage (OFF)
RN2308
RN2309
Translation frequency
Collector output capacitance
RN2307
Input resistor
RN2308
RN2309
RN2307
Resistor ratio
RN2308
RN2309
R1/R2
R1
f
T
C
ob
V
I (OFF)
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−7V,
I
C
= 0
V
EB
=
−15V,
I
C
= 0
Min
―
―
−0.081
−0.078
−0.167
80
80
70
―
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
200
3
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
―
―
―
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
2
2001-06-07