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RN2111: 产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小152KB，共5页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN2111概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2111规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	6 pF
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
VCEsat-Max	0.3 V

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RN2110,RN2111

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2110,RN2111

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1110, RN1111

Unit: mm

Equivalent Circuit

Maximum Ratings

(Ta

25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

−50

−5

−100

100

150

−55~150

Unit

°C

JEDEC

EIAJ

TOSHIBA

Weight: 2.4mg

―

2−2H1A

Electrical Characteristics

(Ta

25°C)

Characteristic

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Input resistor

RN2110

RN2111

Symbol

CBO

EBO

CE (sat)

Test

Circuit

―

Test Condition

−50V,

= 0

−5V,

= 0

−5V,

−1mA

−5mA,

−0.25mA

−10V,

−5mA

−10V,

= 0, f = 1MH

―

Min

―

120

―

3.29

Typ.

―

−0.1

200

4.7

Max

−100

400

−0.3

―

6.11

Unit

―

kΩ

2001-06-07

RN2110,RN2111

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

2001-06-07

RN2111相似产品对比

	RN2111	RN2110
描述	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
是否无铅	含铅	含铅
是否Rohs认证	符合	符合
厂商名称	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	3
Reach Compliance Code	unknow	unknow
ECCN代码	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)	0.1 A	0.1 A
基于收集器的最大容量	6 pF	6 pF
集电极-发射极最大电压	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120	120
JESD-30 代码	R-PDSO-G3	R-PDSO-G3
元件数量	1	1
端子数量	3	3
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V

RN2111

RN2111概述

RN2111规格参数

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RN2111相似产品对比

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