a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Ambient
c, d
t=5s
t=5s
Symbol
R
thJA
Typical
105
200
Maximum
135
260
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 185 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 330 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 1 A
V
GS
= - 1.8 V, I
D
= - 0.5 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 10
I
D
- 1 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 10 V, R
L
= 10
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 1
V
GS
= - 0.1 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 8 V, I
D
= - 1 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
615
90
75
12.5
7.5
1
1.9
14
20
20
52
22
6
10
60
23
40
40
100
45
15
20
120
45
ns
19
12
nC
pF
g
fs
V
DS
= - 10 V, I
D
= - 1 A
-5
0.061
0.080
0.110
0.165
5
0.076
0.100
0.145
0.320
S
- 0.4
- 20
- 12
2.5
-1
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1 A, V
GS
= 0 V
- 0.75
30
14
13
17
T
A
= 25 °C
- 0.7
- 15
- 1.2
60
30
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
V
GS
= 5 V thru 3 V
V
GS
= 2.5 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
9
V
GS
= 2 V
6
6
4
T
C
= 25
°C
T
C
= 125
°C
T
C
= - 55
°C
3
V
GS
= 1.5 V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
2.5
Output Characteristics
0.40
V
GS
= 1.5 V
800
R
DS(on)
- On-Resistance (Ω)
0.30
C - Capacitance (pF)
V
GS
= 1.8 V
0.20
V
GS
= 2.5 V
0.10
200
V
GS
= 4.5 V
0.00
0
3
6
9
I
D
- Drain Current (A)
12
15
0
0
4
C
rss
1000
Transfer Characteristics
C
iss
600
400
C
oss
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1 A
V
GS
- Gate-to-Source Voltage (V)
6
V
DS
= 10 V
1.4
I
D
= 1 A
1.3
Capacitance
V
GS
= 4.5 V, 2.5 V
1.2
V
GS
= 1.8 V
1.1
V
GS
= 1.5 V
V
DS
= 5 V
4
V
DS
= 16 V
1.0
2
0.9
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
15
0.8
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8817DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.40
I
D
= 1 A
0.32
10
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.24
1
T
J
= 25
°C
0.16
T
J
= 125
°C
0.08
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
0.9
14
12
10
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
Power (W)
V
GS(th)
(V)
8
6
4
2
0
0.001
0.6
0.5
I
D
= 250 μA
0.4
0.3
- 50
- 25
0
25
50
75
100
125
150
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
10 ms
0.1
T
A
= 25
°C
100 ms
1 s, 10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.01
Safe Operating Area, Junction-to-Ambient
Document Number: 62759
S12-1858-Rev. A, 06-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
本帖最后由 jameswangsynnex 于 2015-3-3 20:02 编辑 thus presenting a palette of more than 16.7M(ture) or 1 billion(8 bits + FRC) of colors.请问上面提到的FRC是指什么技术？谢谢
...
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
SynQor推出超小的病人全接触型400W医疗电源模块，该电源模块的封装为3×5×1.44，功率密度高达18.3W/立方英寸，转换效率达91%。 SynQor通过推出首款专门针对医疗应用而研制的AC/DC电源模块，使得公司的多元化战略持续成功地延伸至新的医疗领域。ACuQor模块系列实现了在3×5×1.44有限尺寸上提供400W的有用功率。SynQor可以提供48V，36V or 24V的...[详细]
分立器件
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
