Si8411DB
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−20
FEATURES
I
D
(A)
−5.9
−5.0
r
DS(on)
(W)
0.054 @ V
GS
=
−4.5
V
0.075 @ V
GS
=
−2.5
V
D
TrenchFETr Power MOSFET
D
New MICRO FOOTr Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
D
D
D
D
Load Switch
Battery Switch
Charger Switch
PA Switch
S
MICRO FOOT
Bump Side View
3
D
D
2
Backside View
G
8411
xxx
Device Marking: 8411
xxx = Date/Lot Traceability Code
Ordering Information: Si8411DB-T1
D
P-Channel MOSFET
S
4
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Package Reflow Conditions
b
VPR
IR/Convection
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
−20
"12
Unit
V
−5.9
−4.7
−25
−2.5
2.77
1.77
−55
to 150
215
220
−4.3
−3.4
A
−1.3
1.47
0.94
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (drain)
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
35
72
16
Maximum
45
85
20
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
www.vishay.com
1
Si8411DB
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
=
−20
V, V
GS
= 0 V
V
DS
=
−20
V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
−5
V, V
GS
=
−4.5
V
V
GS
=
−4.5
V, I
D
=
−1
A
V
GS
=
−2.5
V, I
D
=
−1
A
V
DS
=
−10
V, I
D
=
−1
A
I
S
=
−1
A, V
GS
= 0 V
−5
0.045
0.065
7
−0.8
−1.1
0.054
0.075
−0.6
−1.4
"100
−1
−5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−1
A, di/dt = 100 A/ms
V
DD
=
−10
V, R
L
= 10
W
I
D
^
−1
A, V
GEN
=
−4.5
V, R
G
= 6
W
V
DS
=
−10
V, V
GS
=
−4.5
V, I
D
=
−1
A
14
1.7
5.1
18
31
50
105
90
85
50
75
160
135
130
ns
W
21
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3V
20
I
D
−
Drain Current (A)
25
V
GS
= 5 thru 3.5 V
20
I
D
−
Drain Current (A)
25
Transfer Characteristics
15
2.5 V
15
10
2V
5
1.5 V
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
10
T
C
= 125_C
5
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
www.vishay.com
2
Si8411DB
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
Vishay Siliconix
On-Resistance vs. Drain Current
2000
Capacitance
r
DS(on)
−
On-Resistance (
W
)
0.16
C
−
Capacitance (pF)
1600
C
iss
0.12
V
GS
= 2.5 V
0.08
V
GS
= 4.5 V
0.04
1200
800
C
oss
400
C
rss
0.00
0
5
10
15
20
25
0
0
4
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
5
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 1 A
Gate Charge
1.4
1.3
1.2
1.1
1.0
0.9
0.8
−50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 1 A
3
2
1
0
0
3
6
9
12
15
Q
g
−
Total Gate Charge (nC)
r
DS(on)
−
On-Resistance (
W)
(Normalized)
4
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.20
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.16
0.12
I
D
= 1 A
0.08
T
J
= 25_C
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
www.vishay.com
3
Si8411DB
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.3
V
GS(th)
Variance (V)
0.2
0.1
0.0
20
−0.1
−0.2
−50
I
D
= 250
mA
60
Power (W)
80
Single Pulse Power, Juncion-To-Ambient
40
−25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
Safe Operating Area
I
DM
Limited
r
DS(on)
Limited
10
I
D
−
Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
P(t) = 1
P(t) = 10
dc
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 72_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
Si8411DB
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
www.vishay.com
5
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