c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. T
C
= 25 °C package limited.
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
Steady State
Symbol
R
thJA
R
thJC
Typical
37
7
Maximum
45
9.5
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
I
D
½
1 A, V
GEN
= 8 V, R
g
= 1
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
V
GS
= 0.1 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
830
146
61
13
7.5
1.1
0.8
3.6
7
18
30
10
5
17
25
10
15
40
60
20
10
35
50
20
ns
ns
20
12
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1 A
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 1.8 V, I
D
= 1 A
V
DS
= 10 V, I
D
= 1 A
5
0.026
0.028
0.030
20
0.033
0.037
0.042
S
0.4
20
18
-3
0.85
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
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For technical questions, contact:
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Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1 A, V
GS
= 0
0.7
15
5
8
7
T
C
= 25 °C
20
30
1.2
30
10
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 5 V thru 2 V
25
V
GS
= 1.5 V
I
D
- Drain Current (A)
20
I
D
- Drain Current (A)
8
10
6
T
C
= 25
°C
4
15
10
5
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
2
T
C
= 125
°C
T
C
= - 55
°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.040
1200
Transfer Characteristics
0.036
R
DS(on)
- On-Resistance (Ω)
900
0.032
V
GS
= 1.8 V
V
GS
= 2.5 V
0.028
V
GS
= 4.5 V
0.024
C
rss
0.020
0
5
10
15
20
25
30
I
D
- Drain Current (A)
0
0
4
C - Capacitance (pF)
C
iss
600
300
C
oss
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
V
DS
= 10 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1 A
V
GS
- Gate-to-Source Voltage (V)
6
V
DS
= 5 V
4
V
DS
= 16 V
1.6
I
D
= 1 A
1.4
Capacitance
V
GS
= 2.5 V, 1.8 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.08
I
D
= 1 A
R
DS(on)
- On-Resistance (Ω)
0.06
I
S
- Source Current (A)
10
T
J
= 150
°C
T
J
= 25
°C
1
0.04
T
J
= 125
°C
0.02
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
0.6
20
Power (W)
125
150
V
GS(th)
(V)
0.5
I
D
= 250 μA
0.4
15
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
100 μs
1 ms
10 ms
100 ms,1 s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1
0.1
T
A
= 25
°C
Safe Operating Area, Junction-to-Ambient
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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